AT7N60S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AT7N60S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 180 nS

Cossⓘ - Capacitancia de salida: 125 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.3 Ohm

Encapsulados: TO-220AB

 Búsqueda de reemplazo de AT7N60S MOSFET

- Selecciónⓘ de transistores por parámetros

 

AT7N60S datasheet

 ..1. Size:1852K  anbon
 au7n60s ad7n60s at7n60s af7n60s ak7n60s ag7n60s.pdf pdf_icon

AT7N60S

 9.1. Size:880K  anbon
 at7n65s.pdf pdf_icon

AT7N60S

AT7N65S N-Channel Enhancement Mode Power MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 650V 1.5 @10V 7A Feature Application Low Crss High efficiency switch mode power supplies Low gate charge Electronic lamp ballasts Fast switching UPS Package Circuit diagram TO-220AB Marking T7N65 XXXXX S G D Document ID Issued Date Revised Date Revision Page. Page 1 AS

Otros transistores... AD5N65S, AT5N65S, AF5N65S, AK5N65S, AG5N65S, AU6N70S, AU7N60S, AD7N60S, 10N65, AF7N60S, AK7N60S, AG7N60S, AU8N60S, AD8N60S, AT8N60S, AF8N60S, AK8N60S