All MOSFET. AT7N60S Datasheet

 

AT7N60S MOSFET. Datasheet pdf. Equivalent


   Type Designator: AT7N60S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 210 nC
   trⓘ - Rise Time: 180 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO-220AB

 AT7N60S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AT7N60S Datasheet (PDF)

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 au7n60s ad7n60s at7n60s af7n60s ak7n60s ag7n60s.pdf

AT7N60S AT7N60S

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 at7n65s.pdf

AT7N60S AT7N60S

AT7N65S N-Channel Enhancement Mode Power MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 650V 1.5@10V 7A Feature Application Low Crss High efficiency switch mode power supplies Low gate charge Electronic lamp ballasts Fast switching UPS Package Circuit diagram TO-220AB Marking T7N65 XXXXX S G D Document ID Issued Date Revised Date Revision Page. Page 1 AS

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