FKBA3006 Todos los transistores

 

FKBA3006 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FKBA3006
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 59 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 81 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 267 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
   Paquete / Cubierta: PRPAK5X6
 

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FKBA3006 Datasheet (PDF)

 ..1. Size:597K  1
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FKBA3006

FKBA3006 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs Product Summary 100% EAS Guaranteed Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline 30V 5.5m 81A Advanced high cell density Trench technology PRPAK5X6 Pin Configuration Description The FKBA3006 is the high cell density trenched N-ch MOSF

 ..2. Size:597K  fetek
 fkba3006.pdf pdf_icon

FKBA3006

FKBA3006 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs Product Summary 100% EAS Guaranteed Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline 30V 5.5m 81A Advanced high cell density Trench technology PRPAK5X6 Pin Configuration Description The FKBA3006 is the high cell density trenched N-ch MOSF

 7.1. Size:596K  1
 fkba3004.pdf pdf_icon

FKBA3006

FKBA3004 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs Product Summary 100% EAS Guaranteed Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline 8.5m 30V 58A Advanced high cell density Trench technology PRPAK5X6 Pin Configuration Description The FKBA3004 is the high cell density trenched N-ch MOSF

 7.2. Size:596K  fetek
 fkba3004.pdf pdf_icon

FKBA3006

FKBA3004 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs Product Summary 100% EAS Guaranteed Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline 8.5m 30V 58A Advanced high cell density Trench technology PRPAK5X6 Pin Configuration Description The FKBA3004 is the high cell density trenched N-ch MOSF

MOSTRAR MÁS

Otros transistores... 7N60DS , 7N60TF , 8N06G , 8N06D , M4N65TF , FS8205 , FMD5N50E5 , FKBA3004 , IRF640N , FKBB3002 , FKBB3004 , FKD3006 , DM4N65E , DM4N65E-F , DM5N65E , DM5N65E-F , DM7N65C .

History: AP72T02GH | STU336S | STL90N3LLH6 | GP1M023A050N | 2SK664 | NCE70N1K1K

 

 
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