FKBA3006 PDF and Equivalents Search

 

FKBA3006 Specs and Replacement

Type Designator: FKBA3006

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 59 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 81 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 267 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: PRPAK5X6

FKBA3006 substitution

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FKBA3006 datasheet

 ..1. Size:597K  1
 fkba3006.pdf pdf_icon

FKBA3006

FKBA3006 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs Product Summary 100% EAS Guaranteed Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline 30V 5.5m 81A Advanced high cell density Trench technology PRPAK5X6 Pin Configuration Description The FKBA3006 is the high cell density trenched N-ch MOSF... See More ⇒

 ..2. Size:597K  fetek
 fkba3006.pdf pdf_icon

FKBA3006

FKBA3006 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs Product Summary 100% EAS Guaranteed Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline 30V 5.5m 81A Advanced high cell density Trench technology PRPAK5X6 Pin Configuration Description The FKBA3006 is the high cell density trenched N-ch MOSF... See More ⇒

 7.1. Size:596K  1
 fkba3004.pdf pdf_icon

FKBA3006

FKBA3004 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs Product Summary 100% EAS Guaranteed Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline 8.5m 30V 58A Advanced high cell density Trench technology PRPAK5X6 Pin Configuration Description The FKBA3004 is the high cell density trenched N-ch MOSF... See More ⇒

 7.2. Size:596K  fetek
 fkba3004.pdf pdf_icon

FKBA3006

FKBA3004 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs Product Summary 100% EAS Guaranteed Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline 8.5m 30V 58A Advanced high cell density Trench technology PRPAK5X6 Pin Configuration Description The FKBA3004 is the high cell density trenched N-ch MOSF... See More ⇒

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Detailed specifications: 7N60DS, 7N60TF, 8N06G, 8N06D, M4N65TF, FS8205, FMD5N50E5, FKBA3004, IRFB4110, FKBB3002, FKBB3004, FKD3006, DM4N65E, DM4N65E-F, DM5N65E, DM5N65E-F, DM7N65C

Keywords - FKBA3006 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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