All MOSFET. FKBA3006 Datasheet

 

FKBA3006 Datasheet and Replacement


   Type Designator: FKBA3006
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 59 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 81 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 267 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: PRPAK5X6
 

 FKBA3006 substitution

   - MOSFET ⓘ Cross-Reference Search

 

FKBA3006 Datasheet (PDF)

 ..1. Size:597K  1
fkba3006.pdf pdf_icon

FKBA3006

FKBA3006 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs Product Summary 100% EAS Guaranteed Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline 30V 5.5m 81A Advanced high cell density Trench technology PRPAK5X6 Pin Configuration Description The FKBA3006 is the high cell density trenched N-ch MOSF

 ..2. Size:597K  fetek
fkba3006.pdf pdf_icon

FKBA3006

FKBA3006 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs Product Summary 100% EAS Guaranteed Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline 30V 5.5m 81A Advanced high cell density Trench technology PRPAK5X6 Pin Configuration Description The FKBA3006 is the high cell density trenched N-ch MOSF

 7.1. Size:596K  1
fkba3004.pdf pdf_icon

FKBA3006

FKBA3004 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs Product Summary 100% EAS Guaranteed Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline 8.5m 30V 58A Advanced high cell density Trench technology PRPAK5X6 Pin Configuration Description The FKBA3004 is the high cell density trenched N-ch MOSF

 7.2. Size:596K  fetek
fkba3004.pdf pdf_icon

FKBA3006

FKBA3004 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs Product Summary 100% EAS Guaranteed Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline 8.5m 30V 58A Advanced high cell density Trench technology PRPAK5X6 Pin Configuration Description The FKBA3004 is the high cell density trenched N-ch MOSF

Datasheet: 7N60DS , 7N60TF , 8N06G , 8N06D , M4N65TF , FS8205 , FMD5N50E5 , FKBA3004 , IRF640N , FKBB3002 , FKBB3004 , FKD3006 , DM4N65E , DM4N65E-F , DM5N65E , DM5N65E-F , DM7N65C .

History: HSS3416E

Keywords - FKBA3006 MOSFET datasheet

 FKBA3006 cross reference
 FKBA3006 equivalent finder
 FKBA3006 lookup
 FKBA3006 substitution
 FKBA3006 replacement

 

 
Back to Top

 


 
.