FKBB3002 Todos los transistores

 

FKBB3002 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FKBB3002

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 20 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 28 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9.8 nS

Cossⓘ - Capacitancia de salida: 81 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm

Encapsulados: PRPAK3X3

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FKBB3002 datasheet

 ..1. Size:458K  1
 fkbb3002.pdf pdf_icon

FKBB3002

FKBB3002 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs 5 100% EAS Guaranteed Product Summary Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline BVDSS RDSON ID Advanced high cell density Trench 30V 18m 28A technology Description PRPAK3X3 Pin Configuration The FKBB3002 is the high cell density trenched N-ch MOSFE

 ..2. Size:458K  fetek
 fkbb3002.pdf pdf_icon

FKBB3002

FKBB3002 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs 5 100% EAS Guaranteed Product Summary Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline BVDSS RDSON ID Advanced high cell density Trench 30V 18m 28A technology Description PRPAK3X3 Pin Configuration The FKBB3002 is the high cell density trenched N-ch MOSFE

 7.1. Size:468K  1
 fkbb3004.pdf pdf_icon

FKBB3002

FKBB3004 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs 100% EAS Guaranteed Product Summary Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline Advanced high cell density Trench 9m 30V 46A technology PRPAK3X3 Pin Configuration Description The FKBB3004 is the high cell density trenched N-ch MOS

 7.2. Size:468K  fetek
 fkbb3004.pdf pdf_icon

FKBB3002

FKBB3004 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs 100% EAS Guaranteed Product Summary Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline Advanced high cell density Trench 9m 30V 46A technology PRPAK3X3 Pin Configuration Description The FKBB3004 is the high cell density trenched N-ch MOS

MOSTRAR MÁS

Otros transistores... 7N60TF , 8N06G , 8N06D , M4N65TF , FS8205 , FMD5N50E5 , FKBA3004 , FKBA3006 , IRF640N , FKBB3004 , FKD3006 , DM4N65E , DM4N65E-F , DM5N65E , DM5N65E-F , DM7N65C , DM7N65C-F .

History: STW9NK90Z

 

 

 

 

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