FKBB3002 PDF and Equivalents Search

 

FKBB3002 Specs and Replacement

Type Designator: FKBB3002

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.8 nS

Cossⓘ - Output Capacitance: 81 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: PRPAK3X3

FKBB3002 substitution

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FKBB3002 datasheet

 ..1. Size:458K  1
 fkbb3002.pdf pdf_icon

FKBB3002

FKBB3002 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs 5 100% EAS Guaranteed Product Summary Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline BVDSS RDSON ID Advanced high cell density Trench 30V 18m 28A technology Description PRPAK3X3 Pin Configuration The FKBB3002 is the high cell density trenched N-ch MOSFE... See More ⇒

 ..2. Size:458K  fetek
 fkbb3002.pdf pdf_icon

FKBB3002

FKBB3002 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs 5 100% EAS Guaranteed Product Summary Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline BVDSS RDSON ID Advanced high cell density Trench 30V 18m 28A technology Description PRPAK3X3 Pin Configuration The FKBB3002 is the high cell density trenched N-ch MOSFE... See More ⇒

 7.1. Size:468K  1
 fkbb3004.pdf pdf_icon

FKBB3002

FKBB3004 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs 100% EAS Guaranteed Product Summary Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline Advanced high cell density Trench 9m 30V 46A technology PRPAK3X3 Pin Configuration Description The FKBB3004 is the high cell density trenched N-ch MOS... See More ⇒

 7.2. Size:468K  fetek
 fkbb3004.pdf pdf_icon

FKBB3002

FKBB3004 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs 100% EAS Guaranteed Product Summary Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline Advanced high cell density Trench 9m 30V 46A technology PRPAK3X3 Pin Configuration Description The FKBB3004 is the high cell density trenched N-ch MOS... See More ⇒

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Detailed specifications: 7N60TF, 8N06G, 8N06D, M4N65TF, FS8205, FMD5N50E5, FKBA3004, FKBA3006, IRF640N, FKBB3004, FKD3006, DM4N65E, DM4N65E-F, DM5N65E, DM5N65E-F, DM7N65C, DM7N65C-F

Keywords - FKBB3002 MOSFET specs

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