AP2307GN Todos los transistores

 

AP2307GN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP2307GN
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 16 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: SOT23
 

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AP2307GN Datasheet (PDF)

 ..1. Size:64K  ape
ap2307gn.pdf pdf_icon

AP2307GN

AP2307GNRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -16V Small Package Outline RDS(ON) 60mD Surface Mount Device ID - 4ASSOT-23GDescriptionDThe Advanced Power MOSFETs from APEC provide the designerwith the best combination of fast switching, low on-resistance andGcost-effe

 0.1. Size:57K  ape
ap2307gn-hf.pdf pdf_icon

AP2307GN

AP2307GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -16V Small Package Outline RDS(ON) 60mD Surface Mount Device ID - 4A RoHS Compliant & Halogen-FreeSSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G

 8.1. Size:1032K  cn apm
ap2307ai.pdf pdf_icon

AP2307GN

AP2307AI -20V P-Channel Enhancement Mode MOSFET Description The AP2307AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-7A DS DR

 8.2. Size:1505K  cn apm
ap2307mi.pdf pdf_icon

AP2307GN

AP2307MI -20V P-Channel Enhancement Mode MOSFET Description The AP2307MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-7A DS DR

Otros transistores... EMB20P03G , EMB22A04G , EMBA5P06J , EMF02P02H , EMF03N02HR , EMF20A02G , EMF20B02V , EMF50N03JS , IRFB3607 , AP2311GN , AP4034GYT-HF-3 , AP4410M , AP4435GM , AP72T03GH-HF , AP9579GP , AP9963GP , AP9977GM-HF .

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