AP2307GN Todos los transistores

 

AP2307GN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP2307GN

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 16 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm

Encapsulados: SOT23

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AP2307GN datasheet

 ..1. Size:64K  ape
 ap2307gn.pdf pdf_icon

AP2307GN

AP2307GN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -16V Small Package Outline RDS(ON) 60m D Surface Mount Device ID - 4A S SOT-23 G Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and G cost-effe

 0.1. Size:57K  ape
 ap2307gn-hf.pdf pdf_icon

AP2307GN

AP2307GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -16V Small Package Outline RDS(ON) 60m D Surface Mount Device ID - 4A RoHS Compliant & Halogen-Free S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G

 8.1. Size:1032K  cn apm
 ap2307ai.pdf pdf_icon

AP2307GN

AP2307AI -20V P-Channel Enhancement Mode MOSFET Description The AP2307AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-7A DS D R

 8.2. Size:1505K  cn apm
 ap2307mi.pdf pdf_icon

AP2307GN

AP2307MI -20V P-Channel Enhancement Mode MOSFET Description The AP2307MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-7A DS D R

MOSTRAR MÁS

Otros transistores... EMB20P03G , EMB22A04G , EMBA5P06J , EMF02P02H , EMF03N02HR , EMF20A02G , EMF20B02V , EMF50N03JS , IRFB3607 , AP2311GN , AP4034GYT-HF-3 , AP4410M , AP4435GM , AP72T03GH-HF , AP9579GP , AP9963GP , AP9977GM-HF .

History: SML20J97 | 2SK3111-ZJ | SFF054 | SWB090R08ET | OSG65R380FEF | APT5014BLLG | AP95T07AGP

 

 

 

 

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