AP2307GN PDF and Equivalents Search

 

AP2307GN Specs and Replacement

Type Designator: AP2307GN

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 16 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOT23

AP2307GN substitution

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AP2307GN datasheet

 ..1. Size:64K  ape
 ap2307gn.pdf pdf_icon

AP2307GN

AP2307GN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -16V Small Package Outline RDS(ON) 60m D Surface Mount Device ID - 4A S SOT-23 G Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and G cost-effe... See More ⇒

 0.1. Size:57K  ape
 ap2307gn-hf.pdf pdf_icon

AP2307GN

AP2307GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -16V Small Package Outline RDS(ON) 60m D Surface Mount Device ID - 4A RoHS Compliant & Halogen-Free S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ... See More ⇒

 8.1. Size:1032K  cn apm
 ap2307ai.pdf pdf_icon

AP2307GN

AP2307AI -20V P-Channel Enhancement Mode MOSFET Description The AP2307AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-7A DS D R ... See More ⇒

 8.2. Size:1505K  cn apm
 ap2307mi.pdf pdf_icon

AP2307GN

AP2307MI -20V P-Channel Enhancement Mode MOSFET Description The AP2307MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-7A DS D R ... See More ⇒

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Detailed specifications: EMB20P03G, EMB22A04G, EMBA5P06J, EMF02P02H, EMF03N02HR, EMF20A02G, EMF20B02V, EMF50N03JS, IRFB3607, AP2311GN, AP4034GYT-HF-3, AP4410M, AP4435GM, AP72T03GH-HF, AP9579GP, AP9963GP, AP9977GM-HF

Keywords - AP2307GN MOSFET specs

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