AP2307GN. Аналоги и основные параметры
Наименование производителя: AP2307GN
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 1.38 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 16 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 8 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 180 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
Тип корпуса: SOT23
Аналог (замена) для AP2307GN
- подборⓘ MOSFET транзистора по параметрам
AP2307GN даташит
ap2307gn.pdf
AP2307GN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -16V Small Package Outline RDS(ON) 60m D Surface Mount Device ID - 4A S SOT-23 G Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and G cost-effe
ap2307gn-hf.pdf
AP2307GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -16V Small Package Outline RDS(ON) 60m D Surface Mount Device ID - 4A RoHS Compliant & Halogen-Free S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G
ap2307ai.pdf
AP2307AI -20V P-Channel Enhancement Mode MOSFET Description The AP2307AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-7A DS D R
ap2307mi.pdf
AP2307MI -20V P-Channel Enhancement Mode MOSFET Description The AP2307MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-7A DS D R
Другие MOSFET... EMB20P03G , EMB22A04G , EMBA5P06J , EMF02P02H , EMF03N02HR , EMF20A02G , EMF20B02V , EMF50N03JS , IRFB3607 , AP2311GN , AP4034GYT-HF-3 , AP4410M , AP4435GM , AP72T03GH-HF , AP9579GP , AP9963GP , AP9977GM-HF .
History: APT1001RSLC | 2SK1009 | SMY52
History: APT1001RSLC | 2SK1009 | SMY52
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Список транзисторов
Обновления
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