AP9985GM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9985GM-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 6.3 nS
Cossⓘ - Capacitancia de salida: 235 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Encapsulados: SO8
Búsqueda de reemplazo de AP9985GM-HF MOSFET
- Selecciónⓘ de transistores por parámetros
AP9985GM-HF datasheet
..1. Size:97K ape
ap9985gm-hf.pdf 
AP9985GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 40V D D Simple Drive Requirement D RDS(ON) 15m D Fast Switching Characteristic ID 10A G S RoHS Compliant & Halogen-Free S S SO-8 D Description AP9985 series are from Advanced Power innovated design and silicon process technology t
6.1. Size:205K ape
ap9985gm.pdf 
AP9985GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 40V D D Fast Switching Speed D RDS(ON) 15m D Surface Mount Package ID 10A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low
9.1. Size:233K ape
ap9980gh-hf.pdf 
AP9980GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3A G RoHS Compliant & Halogen-Free S Description AP9980 series are from Advanced Power innovated design and G D S silicon process technology to achieve the lowe
9.2. Size:198K ape
ap9987gj.pdf 
AP9987GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15A G RoHS Compliant & Halogen-Free S Description AP9987 series are from Advanced Power innovated design and silicon G D S process technology to achieve the lowe
9.3. Size:218K ape
ap9980gj.pdf 
AP9980GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 80V D Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3A G S Description G D S Advanced Power MOSFETs from APEC provide the TO-252(H) designer with the best combination of fast switching, ruggedized device design, lo
9.4. Size:97K ape
ap9987gh-hf ap9987gj-hf.pdf 
AP9987GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15A G RoHS Compliant & Halogen-Free S Description AP9987 series are from Advanced Power innovated design and silicon G D S process technology to achieve the lowe
9.5. Size:97K ape
ap9987gh j-hf.pdf 
AP9987GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Single Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15A G RoHS Compliant & Halogen-Free S Description G D S Advanced Power MOSFETs from APEC provide the TO-252(H) designer with the best combination of fast switchi
9.6. Size:233K ape
ap9987gh.pdf 
AP9987GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15A G RoHS Compliant & Halogen-Free S Description AP9987 series are from Advanced Power innovated design and silicon G D S process technology to achieve the lowe
9.7. Size:209K ape
ap9980gm.pdf 
AP9980GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 80V D2 D2 Single Drive Requirement RDS(ON) 52m D1 D1 Surface Mount Package ID 4.6A G2 S2 G1 S1 SO-8 Description D2 Advanced Power MOSFETs from APEC provide the D1 designer with the best combination of fast switching, ruggedized device d
9.8. Size:208K ape
ap9987gjv.pdf 
AP9987GJV Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15A G RoHS Compliant & Halogen-Free S Description AP9987 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible o
9.9. Size:208K ape
ap9987gm.pdf 
AP9987GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 80V D2 D2 Single Drive Requirement RDS(ON) 90m D1 D1 Surface Mount Package ID 3.5A G2 S2 G1 S1 SO-8 Description D2 Advanced Power MOSFETs from APEC provide the D1 designer with the best combination of fast switching, ruggedized device d
9.10. Size:100K ape
ap9980gh-hf ap9980gj-hf.pdf 
AP9980GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switching, TO-
9.11. Size:174K ape
ap9980gh.pdf 
AP9980GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 80V D Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3A G S Description G D S Advanced Power MOSFETs from APEC provide the TO-252(H) designer with the best combination of fast switching, ruggedized device design, lo
9.12. Size:97K ape
ap9980gm-hf.pdf 
AP9980GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS 80V D2 D2 D1 Single Drive Requirement RDS(ON) 52m D1 Surface Mount Package ID 4.6A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fa
9.13. Size:831K cn vbsemi
ap9987gj.pdf 
AP9987GJ www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY DT-Trench Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.115 at VGS = 10 V 15 100 % Rg Tested 100 0.120 at VGS = 6 V 15 APPLICATIONS Primary Side Switch TO-251 D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise
Otros transistores... AP2311GN
, AP4034GYT-HF-3
, AP4410M
, AP4435GM
, AP72T03GH-HF
, AP9579GP
, AP9963GP
, AP9977GM-HF
, AO4407
, AP9T18GH-HF
, FBM75N68P
, FBM75N68B
, MTA50P01SN3
, MTB028N10QNCQ8
, MTB030N10RQ8
, MTB095N10KRL3
, MTB095N10KRN3
.
History: QM3098M6
| RCJ050N25
| H04N65E
| FCP190N65F
| SVT085R5NL5TR
| AOD4124