AP9985GM-HF Specs and Replacement
Type Designator: AP9985GM-HF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.3 nS
Cossⓘ -
Output Capacitance: 235 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: SO8
- MOSFET ⓘ Cross-Reference Search
AP9985GM-HF datasheet
..1. Size:97K ape
ap9985gm-hf.pdf 
AP9985GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 40V D D Simple Drive Requirement D RDS(ON) 15m D Fast Switching Characteristic ID 10A G S RoHS Compliant & Halogen-Free S S SO-8 D Description AP9985 series are from Advanced Power innovated design and silicon process technology t... See More ⇒
6.1. Size:205K ape
ap9985gm.pdf
AP9985GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 40V D D Fast Switching Speed D RDS(ON) 15m D Surface Mount Package ID 10A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low... See More ⇒
9.1. Size:233K ape
ap9980gh-hf.pdf
AP9980GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3A G RoHS Compliant & Halogen-Free S Description AP9980 series are from Advanced Power innovated design and G D S silicon process technology to achieve the lowe... See More ⇒
9.2. Size:198K ape
ap9987gj.pdf
AP9987GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15A G RoHS Compliant & Halogen-Free S Description AP9987 series are from Advanced Power innovated design and silicon G D S process technology to achieve the lowe... See More ⇒
9.3. Size:218K ape
ap9980gj.pdf
AP9980GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 80V D Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3A G S Description G D S Advanced Power MOSFETs from APEC provide the TO-252(H) designer with the best combination of fast switching, ruggedized device design, lo... See More ⇒
9.4. Size:97K ape
ap9987gh-hf ap9987gj-hf.pdf
AP9987GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15A G RoHS Compliant & Halogen-Free S Description AP9987 series are from Advanced Power innovated design and silicon G D S process technology to achieve the lowe... See More ⇒
9.5. Size:97K ape
ap9987gh j-hf.pdf
AP9987GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Single Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15A G RoHS Compliant & Halogen-Free S Description G D S Advanced Power MOSFETs from APEC provide the TO-252(H) designer with the best combination of fast switchi... See More ⇒
9.6. Size:233K ape
ap9987gh.pdf
AP9987GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15A G RoHS Compliant & Halogen-Free S Description AP9987 series are from Advanced Power innovated design and silicon G D S process technology to achieve the lowe... See More ⇒
9.7. Size:209K ape
ap9980gm.pdf
AP9980GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 80V D2 D2 Single Drive Requirement RDS(ON) 52m D1 D1 Surface Mount Package ID 4.6A G2 S2 G1 S1 SO-8 Description D2 Advanced Power MOSFETs from APEC provide the D1 designer with the best combination of fast switching, ruggedized device d... See More ⇒
9.8. Size:208K ape
ap9987gjv.pdf
AP9987GJV Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15A G RoHS Compliant & Halogen-Free S Description AP9987 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible o... See More ⇒
9.9. Size:208K ape
ap9987gm.pdf
AP9987GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 80V D2 D2 Single Drive Requirement RDS(ON) 90m D1 D1 Surface Mount Package ID 3.5A G2 S2 G1 S1 SO-8 Description D2 Advanced Power MOSFETs from APEC provide the D1 designer with the best combination of fast switching, ruggedized device d... See More ⇒
9.10. Size:100K ape
ap9980gh-hf ap9980gj-hf.pdf
AP9980GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D S designer with the best combination of fast switching, TO-... See More ⇒
9.11. Size:174K ape
ap9980gh.pdf
AP9980GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 80V D Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3A G S Description G D S Advanced Power MOSFETs from APEC provide the TO-252(H) designer with the best combination of fast switching, ruggedized device design, lo... See More ⇒
9.12. Size:97K ape
ap9980gm-hf.pdf
AP9980GM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS 80V D2 D2 D1 Single Drive Requirement RDS(ON) 52m D1 Surface Mount Package ID 4.6A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fa... See More ⇒
9.13. Size:831K cn vbsemi
ap9987gj.pdf
AP9987GJ www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY DT-Trench Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.115 at VGS = 10 V 15 100 % Rg Tested 100 0.120 at VGS = 6 V 15 APPLICATIONS Primary Side Switch TO-251 D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise... See More ⇒
Detailed specifications: AP2311GN, AP4034GYT-HF-3, AP4410M, AP4435GM, AP72T03GH-HF, AP9579GP, AP9963GP, AP9977GM-HF, AO4407, AP9T18GH-HF, FBM75N68P, FBM75N68B, MTA50P01SN3, MTB028N10QNCQ8, MTB030N10RQ8, MTB095N10KRL3, MTB095N10KRN3
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