AP9985GM-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP9985GM-HF
Маркировка: 9985GM
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2.5 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 10 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 14.7 nC
Время нарастания (tr): 6.3 ns
Выходная емкость (Cd): 235 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.015 Ohm
Тип корпуса: SO8
Аналог (замена) для AP9985GM-HF
AP9985GM-HF Datasheet (PDF)
ap9985gm-hf.pdf
AP9985GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 40VDD Simple Drive Requirement D RDS(ON) 15mD Fast Switching Characteristic ID 10AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAP9985 series are from Advanced Power innovated design andsilicon process technology t
ap9985gm.pdf
AP9985GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS 40VDD Fast Switching Speed D RDS(ON) 15mD Surface Mount Package ID 10AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, ultra low
ap9980gh-hf.pdf
AP9980GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3AG RoHS Compliant & Halogen-FreeSDescriptionAP9980 series are from Advanced Power innovated design andGDSsilicon process technology to achieve the lowe
ap9987gj.pdf
AP9987GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15AG RoHS Compliant & Halogen-FreeSDescriptionAP9987 series are from Advanced Power innovated design and siliconGDSprocess technology to achieve the lowe
ap9980gj.pdf
AP9980GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 80VD Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3AGSDescriptionGDSAdvanced Power MOSFETs from APEC provide the TO-252(H)designer with the best combination of fast switching,ruggedized device design, lo
ap9987gh-hf ap9987gj-hf.pdf
AP9987GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15AG RoHS Compliant & Halogen-FreeSDescriptionAP9987 series are from Advanced Power innovated design and siliconGDSprocess technology to achieve the lowe
ap9987gh j-hf.pdf
AP9987GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Single Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15AG RoHS Compliant & Halogen-FreeSDescriptionGDSAdvanced Power MOSFETs from APEC provide the TO-252(H)designer with the best combination of fast switchi
ap9987gh.pdf
AP9987GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15AG RoHS Compliant & Halogen-FreeSDescriptionAP9987 series are from Advanced Power innovated design and siliconGDSprocess technology to achieve the lowe
ap9980gm.pdf
AP9980GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 80VD2D2 Single Drive Requirement RDS(ON) 52mD1D1 Surface Mount Package ID 4.6AG2S2G1S1SO-8DescriptionD2Advanced Power MOSFETs from APEC provide the D1designer with the best combination of fast switching,ruggedized device d
ap9987gjv.pdf
AP9987GJVHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Simple Drive Requirement RDS(ON) 90m Fast Switching Performance ID 15AG RoHS Compliant & Halogen-FreeSDescriptionAP9987 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible o
ap9987gm.pdf
AP9987GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 80VD2D2 Single Drive Requirement RDS(ON) 90mD1D1 Surface Mount Package ID 3.5AG2S2G1S1SO-8DescriptionD2Advanced Power MOSFETs from APEC provide the D1designer with the best combination of fast switching,ruggedized device d
ap9980gh-hf ap9980gj-hf.pdf
AP9980GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 80V Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDSdesigner with the best combination of fast switching,TO-
ap9980gh.pdf
AP9980GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 80VD Single Drive Requirement RDS(ON) 45m Fast Switching Performance ID 21.3AGSDescriptionGDSAdvanced Power MOSFETs from APEC provide the TO-252(H)designer with the best combination of fast switching,ruggedized device design, lo
ap9980gm-hf.pdf
AP9980GM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS 80VD2D2D1 Single Drive Requirement RDS(ON) 52mD1 Surface Mount Package ID 4.6AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fa
ap9987gj.pdf
AP9987GJwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.115 at VGS = 10 V 15 100 % Rg Tested1000.120 at VGS = 6 V 15APPLICATIONS Primary Side SwitchTO-251DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise
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