MTE050N15BRV8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTE050N15BRV8
Código: E050N15BR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 21 W
Voltaje máximo drenador - fuente |Vds|: 150 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 12.4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 20.1 nC
Tiempo de subida (tr): 17.2 nS
Conductancia de drenaje-sustrato (Cd): 80 pF
Resistencia entre drenaje y fuente RDS(on): 0.065 Ohm
Paquete / Cubierta: DFN3X3
Búsqueda de reemplazo de MOSFET MTE050N15BRV8
MTE050N15BRV8 Datasheet (PDF)
mte050n15brv8.pdf
Spec. No. : C033V8 Issued Date : 2017.10.05 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTE050N15BRV8BVDSS 150VID @ TC=25C, VGS=10V 12.4A ID @ TA=25C, VGS=10V 4.3A 49.1m VGS=10V, ID=3.4A Features RDSON(TYP) 58.5m VGS=6V, ID=3.3A Single Drive Requirement Low On-resistance Fast Switchi
mte050n15brv8.pdf
Spec. No. : C033V8 Issued Date : 2017.10.05 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTE050N15BRV8BVDSS 150VID @ TC=25C, VGS=10V 12.4A ID @ TA=25C, VGS=10V 4.3A 49.1m VGS=10V, ID=3.4A Features RDSON(TYP) 58.5m VGS=6V, ID=3.3A Single Drive Requirement Low On-resistance Fast Switchi
mte050n15brh8.pdf
Spec. No. : C033H8 Issued Date : 2017.11.15 CYStech Electronics Corp. Revised Date : Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET MTE050N15BRH8BVDSS 150VID@VGS=10V, TC=25C 16A ID@VGS=10V, TA=25C 4.3A RDS(ON)@VGS=10V, ID=3.4A 49.1m(typ) Features RDS(ON)@VGS=6V, ID=3.3A 58.5 m(typ) Single Drive Requirement Low On-resistance Fast Switchi
mte050n15brh8.pdf
Spec. No. : C033H8 Issued Date : 2017.11.15 CYStech Electronics Corp. Revised Date : Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET MTE050N15BRH8BVDSS 150VID@VGS=10V, TC=25C 16A ID@VGS=10V, TA=25C 4.3A RDS(ON)@VGS=10V, ID=3.4A 49.1m(typ) Features RDS(ON)@VGS=6V, ID=3.3A 58.5 m(typ) Single Drive Requirement Low On-resistance Fast Switchi
mte05n10e3.pdf
Spec. No. : C928E3 Issued Date : 2013.11.04 CYStech Electronics Corp.Revised Date : 2013.11.12 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 100VMTE05N10E3 ID 140A5.9m RDSON(TYP) @ VGS=10V, ID=20A RDSON(TYP) @ VGS=7V, ID=20A 6.2m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Charact
mte05n10fp.pdf
Spec. No. : C928FP Issued Date : 2015.03.16 CYStech Electronics Corp.Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFETBVDSS 100VMTE05N10FP ID @ VGS=10V, TC=25C 109A 5.9m RDSON(TYP) @ VGS=10V, ID=20A 6.2m RDSON(TYP) @ VGS=7V, ID=20A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Ch
mte05n08e3.pdf
Spec. No. : C918E3 Issued Date : 2013.06.10 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 80VMTE05N08E3 ID 180A4.3m RDSON(TYP) @ VGS=10V, ID=20A RDSON(TYP) @ VGS=7V, ID=20A 4.5m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic
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