MTE050N15BRV8 MOSFET Datasheet: N-Ch, 150V, 12.4A. Full specification with pinout and replacement list

MTE050N15BRV8 Specs and Replacement

Type Designator: MTE050N15BRV8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 21 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17.2 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: DFN3X3

MTE050N15BRV8 substitution

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MTE050N15BRV8 datasheet

..1. Size:468K 1
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Spec. No. C033V8 Issued Date 2017.10.05 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET MTE050N15BRV8 BVDSS 150V ID @ TC=25 C, VGS=10V 12.4A ID @ TA=25 C, VGS=10V 4.3A 49.1m VGS=10V, ID=3.4A Features RDSON(TYP) 58.5m VGS=6V, ID=3.3A Single Drive Requirement Low On-resistance Fast Switchi... See More ⇒

..2. Size:468K cystek
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3.1. Size:858K 1
mte050n15brh8.pdf pdf_icon

Spec. No. C033H8 Issued Date 2017.11.15 CYStech Electronics Corp. Revised Date Page No. 1/11 N-Channel Enhancement Mode Power MOSFET MTE050N15BRH8 BVDSS 150V ID@VGS=10V, TC=25 C 16A ID@VGS=10V, TA=25 C 4.3A RDS(ON)@VGS=10V, ID=3.4A 49.1m (typ) Features RDS(ON)@VGS=6V, ID=3.3A 58.5 m (typ) Single Drive Requirement Low On-resistance Fast Switchi... See More ⇒

3.2. Size:858K cystek
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