SSF8N80A MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SSF8N80A datasheet

..1. Size:938K samsung
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Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.000 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu

7.1. Size:562K silikron
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SSF8N80F Main Product Characteristics VDSS 800V RDS(on) 1.3 (typ.) ID 8A TO-220F Ma r k ing an d pin S che ma ti c di ag r a m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov

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SSF8N80 Main Product Characteristics VDSS 800V RDS(on) 1.38 (typ.) ID 8A TO-220 Ma r k ing an d pin S che ma ti c di ag r a m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover

Otros transistores... SSF6N70A , SSF6N80A , SSF6N90A , SSF70N10A , SSF7N60A , SSF7N80A , SSF7N90A , SSF80N06A , IRFZ44N , SSF8N90A , SSF9N80A , SSF9N90A , SSH10N60A , SSH10N70 , SSH10N70A , SSH10N80A , SSH10N90A .