All MOSFET. SSF8N80A Datasheet

 

SSF8N80A MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSF8N80A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 95 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 5.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 93 nC
   trⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO3PF

 SSF8N80A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSF8N80A Datasheet (PDF)

 ..1. Size:938K  samsung
 ssf8n80a.pdf

SSF8N80A SSF8N80A

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.000 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

 7.1. Size:562K  silikron
 ssf8n80zh.pdf

SSF8N80A SSF8N80A

SSF8N80ZFMain Product Characteristics: VDSS 800V RDS(on) 1.1 (typ.) ID 8ATO-220FMarking and pin Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 7.2. Size:526K  silikron
 ssf8n80f.pdf

SSF8N80A SSF8N80A

SSF8N80F Main Product Characteristics: VDSS 800V RDS(on) 1.3 (typ.) ID 8A TO-220F Ma r k ing an d pin S che ma ti c di ag r a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov

 7.3. Size:531K  silikron
 ssf8n80.pdf

SSF8N80A SSF8N80A

SSF8N80 Main Product Characteristics: VDSS 800V RDS(on) 1.38(typ.) ID 8A TO-220 Ma r k ing an d pin S che ma ti c di ag r a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover

Datasheet: SSF6N70A , SSF6N80A , SSF6N90A , SSF70N10A , SSF7N60A , SSF7N80A , SSF7N90A , SSF80N06A , IRFZ44N , SSF8N90A , SSF9N80A , SSF9N90A , SSH10N60A , SSH10N70 , SSH10N70A , SSH10N80A , SSH10N90A .

 

 
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