CS15N50F Todos los transistores

 ..1. Size:231K  crhj
 cs15n50f a9r.pdf

Silicon N-Channel Power MOSFET R CS15N50F A9R General Description VDSS 500 V CS15N50F A9R, the silicon N-channel Enhanced VDMOSFETs, ID 15 A PD(TC=25 ) 70 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.3 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 ..2. Size:403K  convert
 cs15n50f cs15n50p.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS15N50F,CS15N50P 500V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS15N50F TO-220F CS15N50F CS

 0.1. Size:231K  wuxi china
 cs15n50fa9r.pdf

Silicon N-Channel Power MOSFET R CS15N50F A9R General Description VDSS 500 V CS15N50F A9R, the silicon N-channel Enhanced VDMOSFETs, ID 15 A PD(TC=25 ) 70 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.3 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 7.1. Size:229K  crhj
 cs15n50 a8r.pdf

Silicon N-Channel Power MOSFET R CS15N50 A8R General Description VDSS 500 V CS15N50 A8R, the silicon N-channel Enhanced ID 15 A PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.3 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 9.1. Size:811K  jilin sino
 jcs15n70c jcs15n70f.pdf

N R N-CHANNEL MOSFET JCS15N70C Package MAIN CHARACTERISTICS ID 15.0 A VDSS 700 V Rdson-max 0.55 @Vgs=10V Qg-typ 44.6 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS F

 9.2. Size:2166K  jilin sino
 jcs15n60ch jcs15n60fh jcs15n60bh jcs15n60sh.pdf

N R N-CHANNEL MOSFET JCS15N60H Package MAIN CHARACTERISTICS ID 15 A VDSS 600 V 0.52 (MAX) Rdson-max Vgs=10V 0.45 (TYP) Qg 35.7 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based o

 9.3. Size:1723K  jilin sino
 jcs15n65fei jcs15n65bei jcs15n65sei jcs15n65cei.pdf

N R N-CHANNEL MOSFET JCS15N65EI Package MAIN CHARACTERISTICS ID 15A VDSS 650V Rdson-max 0.52 Vgs=10V Qg-Typ 52.3nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

 9.4. Size:1150K  jilin sino
 jcs15n70fc.pdf

 9.5. Size:1109K  jilin sino
 jcs15n65fh.pdf

N R N-CHANNEL MOSFET JCS15N65H MAIN CHARACTERISTICS Package ID 15.0 A VDSS 650 V Rdson-Max 0.55 @Vgs=10V Qg-Typ 35.2 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

 9.6. Size:125K  china
 cs15n60.pdf

CS15N60 N PD TC=25 280 W 2.3 W/ ID VGS=10V,TC=25 15 A ID VGS=10V,TC=100 9.7 A IDM 60 A VGS 30 V Tjm +150 Tstg -55 +150 RthJC 0.44 /W BVDSS VGS=0V,ID=0.25mA 600 V RDS on VGS=10V,ID=9A 0.46

 9.7. Size:401K  convert
 cs15n70f.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS15N70F 700V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS15N70F TO-220F CS15N70F Absolute Ma