CS15N50F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CS15N50F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 44 nC
   trⓘ - Tiempo de subida: 27 nS
   Cossⓘ - Capacitancia de salida: 185 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.42 Ohm
   Paquete / Cubierta: TO-220F

Búsqueda de reemplazo de MOSFET CS15N50F

CS15N50F Datasheet (PDF)

..1. Size:231K crhj
cs15n50f a9r.pdf

Silicon N-Channel Power MOSFET R CS15N50F A9R General Description VDSS 500 V CS15N50F A9R, the silicon N-channel Enhanced VDMOSFETs, ID 15 A PD(TC=25) 70 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.3 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

..2. Size:403K convert
cs15n50f cs15n50p.pdf

nvertSuzhou Convert Semiconductor Co ., Ltd.CS15N50F,CS15N50P500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS15N50F TO-220F CS15N50FCS

0.1. Size:231K wuxi china
cs15n50fa9r.pdf

7.1. Size:229K crhj
cs15n50 a8r.pdf

Silicon N-Channel Power MOSFET R CS15N50 A8R General Description VDSS 500 V CS15N50 A8R, the silicon N-channel Enhanced ID 15 A PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.3 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

9.1. Size:811K jilin sino
jcs15n70c jcs15n70f.pdf

N RN-CHANNEL MOSFET JCS15N70C Package MAIN CHARACTERISTICS ID 15.0 A VDSS 700 V Rdson-max 0.55 @Vgs=10V Qg-typ 44.6 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS F

9.2. Size:2166K jilin sino
jcs15n60ch jcs15n60fh jcs15n60bh jcs15n60sh.pdf

N RN-CHANNEL MOSFET JCS15N60H Package MAIN CHARACTERISTICS ID 15 A VDSS 600 V 0.52 (MAX) Rdson-maxVgs=10V 0.45 (TYP) Qg 35.7 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based o

9.3. Size:1723K jilin sino
jcs15n65fei jcs15n65bei jcs15n65sei jcs15n65cei.pdf

N RN-CHANNEL MOSFET JCS15N65EI Package MAIN CHARACTERISTICS ID 15A VDSS 650V Rdson-max 0.52 Vgs=10V Qg-Typ 52.3nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

9.4. Size:1150K jilin sino
jcs15n70fc.pdf

N RN-CHANNEL MOSFET JCS15N70FC_K103 Package MAIN CHARACTERISTICS ID 15.0 A VDSS 710 V Rdson-max 0.55 @Vgs=10V Qg-typ 44.6 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS

9.5. Size:1109K jilin sino
jcs15n65fh.pdf

N RN-CHANNEL MOSFET JCS15N65H MAIN CHARACTERISTICS Package ID 15.0 A VDSS 650 V Rdson-Max 0.55 @Vgs=10V Qg-Typ 35.2 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

9.6. Size:125K china
cs15n60.pdf

CS15N60 N PD TC=25 280 W 2.3 W/ ID VGS=10V,TC=25 15 A ID VGS=10V,TC=100 9.7 A IDM 60 A VGS 30 V Tjm +150 Tstg -55 +150 RthJC 0.44 /W BVDSS VGS=0V,ID=0.25mA 600 V RDS on VGS=10V,ID=9A 0.46

9.7. Size:401K convert
cs15n70f.pdf

nvertSuzhou Convert Semiconductor Co ., Ltd.CS15N70F700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS15N70F TO-220F CS15N70FAbsolute Ma

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