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CS15N50F Spec and Replacement


   Type Designator: CS15N50F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
   Package: TO-220F

 CS15N50F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS15N50F Specs

 ..1. Size:231K  crhj
cs15n50f a9r.pdf pdf_icon

CS15N50F

Silicon N-Channel Power MOSFET R CS15N50F A9R General Description VDSS 500 V CS15N50F A9R, the silicon N-channel Enhanced VDMOSFETs, ID 15 A PD(TC=25 ) 70 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.3 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒

 ..2. Size:403K  convert
cs15n50f cs15n50p.pdf pdf_icon

CS15N50F

nvert Suzhou Convert Semiconductor Co ., Ltd. CS15N50F,CS15N50P 500V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS15N50F TO-220F CS15N50F CS... See More ⇒

 0.1. Size:231K  wuxi china
cs15n50fa9r.pdf pdf_icon

CS15N50F

Silicon N-Channel Power MOSFET R CS15N50F A9R General Description VDSS 500 V CS15N50F A9R, the silicon N-channel Enhanced VDMOSFETs, ID 15 A PD(TC=25 ) 70 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.3 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒

 7.1. Size:229K  crhj
cs15n50 a8r.pdf pdf_icon

CS15N50F

Silicon N-Channel Power MOSFET R CS15N50 A8R General Description VDSS 500 V CS15N50 A8R, the silicon N-channel Enhanced ID 15 A PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.3 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒

Detailed specifications: CS12N65FF , CS12N80F , CS12N80V , CS13N60P , CS13N60F , CS13N65P , CS13N65F , CS14N80V , IRF3710 , CS15N50P , CS15N70F , CS16N60F , CS16N60P , CS16N65F , CS16N65P , CS16N65W , CS18N20BF .

History: IPP60R190P6 | AP02N90JB

Keywords - CS15N50F MOSFET specs

 CS15N50F cross reference
 CS15N50F equivalent finder
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History: IPP60R190P6 | AP02N90JB

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