CS15N50F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CS15N50F
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 32 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 44 nC
trⓘ - Время нарастания: 27 ns
Cossⓘ - Выходная емкость: 185 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.42 Ohm
Тип корпуса: TO-220F
CS15N50F Datasheet (PDF)
cs15n50f a9r.pdf
Silicon N-Channel Power MOSFET R CS15N50F A9R General Description VDSS 500 V CS15N50F A9R, the silicon N-channel Enhanced VDMOSFETs, ID 15 A PD(TC=25) 70 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.3 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
cs15n50f cs15n50p.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CS15N50F,CS15N50P500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS15N50F TO-220F CS15N50FCS
cs15n50fa9r.pdf
Silicon N-Channel Power MOSFET R CS15N50F A9R General Description VDSS 500 V CS15N50F A9R, the silicon N-channel Enhanced VDMOSFETs, ID 15 A PD(TC=25) 70 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.3 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
cs15n50 a8r.pdf
Silicon N-Channel Power MOSFET R CS15N50 A8R General Description VDSS 500 V CS15N50 A8R, the silicon N-channel Enhanced ID 15 A PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.3 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
jcs15n70c jcs15n70f.pdf
N RN-CHANNEL MOSFET JCS15N70C Package MAIN CHARACTERISTICS ID 15.0 A VDSS 700 V Rdson-max 0.55 @Vgs=10V Qg-typ 44.6 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS F
jcs15n60ch jcs15n60fh jcs15n60bh jcs15n60sh.pdf
N RN-CHANNEL MOSFET JCS15N60H Package MAIN CHARACTERISTICS ID 15 A VDSS 600 V 0.52 (MAX) Rdson-maxVgs=10V 0.45 (TYP) Qg 35.7 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based o
jcs15n65fei jcs15n65bei jcs15n65sei jcs15n65cei.pdf
N RN-CHANNEL MOSFET JCS15N65EI Package MAIN CHARACTERISTICS ID 15A VDSS 650V Rdson-max 0.52 Vgs=10V Qg-Typ 52.3nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
jcs15n70fc.pdf
N RN-CHANNEL MOSFET JCS15N70FC_K103 Package MAIN CHARACTERISTICS ID 15.0 A VDSS 710 V Rdson-max 0.55 @Vgs=10V Qg-typ 44.6 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS
jcs15n65fh.pdf
N RN-CHANNEL MOSFET JCS15N65H MAIN CHARACTERISTICS Package ID 15.0 A VDSS 650 V Rdson-Max 0.55 @Vgs=10V Qg-Typ 35.2 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
cs15n60.pdf
CS15N60 N PD TC=25 280 W 2.3 W/ ID VGS=10V,TC=25 15 A ID VGS=10V,TC=100 9.7 A IDM 60 A VGS 30 V Tjm +150 Tstg -55 +150 RthJC 0.44 /W BVDSS VGS=0V,ID=0.25mA 600 V RDS on VGS=10V,ID=9A 0.46
cs15n70f.pdf
nvertSuzhou Convert Semiconductor Co ., Ltd.CS15N70F700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS15N70F TO-220F CS15N70FAbsolute Ma
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918