CS16N60F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS16N60F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 63.7 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 43 nS
Cossⓘ - Capacitancia de salida: 214 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.48 Ohm
Encapsulados: TO-220F
Búsqueda de reemplazo de CS16N60F MOSFET
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CS16N60F datasheet
cs16n60f a9h.pdf
Silicon N-Channel Power MOSFET R CS16N60F A9H VDSS 600 V General Description ID 16 A CS16N60F A9H, the silicon N-channel Enhanced PD(TC=25 ) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
cs16n60f cs16n60p.pdf
nvert Suzhou Convert Semiconductor Co ., Ltd. CS16N60F,CS16N60P 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS16N60F TO-220F CS16N60F CS
cs16n60 a8h.pdf
Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cs16n60a8h.pdf
Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
Otros transistores... CS13N60P , CS13N60F , CS13N65P , CS13N65F , CS14N80V , CS15N50F , CS15N50P , CS15N70F , IRFB4115 , CS16N60P , CS16N65F , CS16N65P , CS16N65W , CS18N20BF , CS18N20BP , CS18N20BB , CS18N50F .
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