CS16N60F Datasheet. Specs and Replacement

Type Designator: CS16N60F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43 nS

Cossⓘ - Output Capacitance: 214 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm

Package: TO-220F

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CS16N60F substitution

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CS16N60F datasheet

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CS16N60F

Silicon N-Channel Power MOSFET R CS16N60F A9H VDSS 600 V General Description ID 16 A CS16N60F A9H, the silicon N-channel Enhanced PD(TC=25 ) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various... See More ⇒

 ..2. Size:776K  convert
cs16n60f cs16n60p.pdf pdf_icon

CS16N60F

nvert Suzhou Convert Semiconductor Co ., Ltd. CS16N60F,CS16N60P 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS16N60F TO-220F CS16N60F CS... See More ⇒

 7.1. Size:426K  crhj
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CS16N60F

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒

 7.2. Size:426K  wuxi china
cs16n60a8h.pdf pdf_icon

CS16N60F

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒

Detailed specifications: CS13N60P, CS13N60F, CS13N65P, CS13N65F, CS14N80V, CS15N50F, CS15N50P, CS15N70F, IRFB4115, CS16N60P, CS16N65F, CS16N65P, CS16N65W, CS18N20BF, CS18N20BP, CS18N20BB, CS18N50F

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