All MOSFET. CS16N60F Datasheet

 

CS16N60F Datasheet and Replacement


   Type Designator: CS16N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 214 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: TO-220F
 

 CS16N60F substitution

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CS16N60F Datasheet (PDF)

 ..1. Size:306K  crhj
cs16n60f a9h.pdf pdf_icon

CS16N60F

Silicon N-Channel Power MOSFET R CS16N60F A9H VDSS 600 V General Description ID 16 A CS16N60F A9H, the silicon N-channel Enhanced PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 ..2. Size:776K  convert
cs16n60f cs16n60p.pdf pdf_icon

CS16N60F

nvertSuzhou Convert Semiconductor Co ., Ltd.CS16N60F,CS16N60P600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS16N60F TO-220F CS16N60FCS

 7.1. Size:426K  crhj
cs16n60 a8h.pdf pdf_icon

CS16N60F

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 7.2. Size:426K  wuxi china
cs16n60a8h.pdf pdf_icon

CS16N60F

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

Datasheet: CS13N60P , CS13N60F , CS13N65P , CS13N65F , CS14N80V , CS15N50F , CS15N50P , CS15N70F , IRFP250N , CS16N60P , CS16N65F , CS16N65P , CS16N65W , CS18N20BF , CS18N20BP , CS18N20BB , CS18N50F .

History: BSL211DV | APT8020B2LL | HM2300PR | BRF4N60 | TF2015 | FP8V50 | HFS12N65U

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