All MOSFET. CS16N60F Datasheet

 

CS16N60F Datasheet and Replacement


   Type Designator: CS16N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 63.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 214 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: TO-220F
      - MOSFET Cross-Reference Search

 

CS16N60F Datasheet (PDF)

 ..1. Size:306K  crhj
cs16n60f a9h.pdf pdf_icon

CS16N60F

Silicon N-Channel Power MOSFET R CS16N60F A9H VDSS 600 V General Description ID 16 A CS16N60F A9H, the silicon N-channel Enhanced PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 ..2. Size:776K  convert
cs16n60f cs16n60p.pdf pdf_icon

CS16N60F

nvertSuzhou Convert Semiconductor Co ., Ltd.CS16N60F,CS16N60P600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS16N60F TO-220F CS16N60FCS

 7.1. Size:426K  crhj
cs16n60 a8h.pdf pdf_icon

CS16N60F

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 7.2. Size:426K  wuxi china
cs16n60a8h.pdf pdf_icon

CS16N60F

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TMP160N10A | HLML6401 | AP01L60T | FHP10N65A | IRFBE30PBF | CS3205 | AP85T03GH-HF

Keywords - CS16N60F MOSFET datasheet

 CS16N60F cross reference
 CS16N60F equivalent finder
 CS16N60F lookup
 CS16N60F substitution
 CS16N60F replacement

 

 
Back to Top

 


 
.