CS40N20P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS40N20P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 104 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 40 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 54 nS
Cossⓘ - Capacitancia de salida: 355 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
Encapsulados: TO-220
Búsqueda de reemplazo de CS40N20P MOSFET
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CS40N20P datasheet
cs40n20f cs40n20p.pdf
nvert CS40N20F,CS40N20P Suzhou Convert Semiconductor Co ., Ltd. 200V N-Channel MOSFET FEATURES Proprietary New Planar Technology RDS(ON),typ.=50m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode APPLICATIONS DC-DC Converters DC-AC Inverters for UPS SMPS and Motor controls Device Marking and Package Information Device Package
cs40n20 a8.pdf
Silicon N-Channel Power MOSFET R CS40N20 A8 General Description VDSS 200 V CS40N20 A8 the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
cs40n20 anh.pdf
Silicon N-Channel Power MOSFET R CS40N20 ANH General Description VDSS 200 V CS40N20 ANH the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario
cs40n20f a9h.pdf
Silicon N-Channel Power MOSFET R CS40N20F A9H General Description VDSS 200 V CS40N20FA9H the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou
Otros transistores... CS3N80BP, CS3N80BU, CS3N80BL, CS3N80BK, CS3N90F, CS3N90P, CS3N90B, CS40N20F, IRF740, CS4N100F, CS4N100V, CS4N100VF, CS4N150V, CS4N150W, CS4N150VF, CS4N60P, CS4N60U
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