CS40N20P Datasheet and Replacement
Type Designator: CS40N20P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 154 nC
tr ⓘ - Rise Time: 54 nS
Cossⓘ - Output Capacitance: 355 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: TO-220
CS40N20P substitution
CS40N20P Datasheet (PDF)
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nvertCS40N20F,CS40N20PSuzhou Convert Semiconductor Co ., Ltd.200V N-Channel MOSFETFEATURES Proprietary New Planar Technology RDS(ON),typ.=50m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body DiodeAPPLICATIONS DC-DC Converters DC-AC Inverters for UPS SMPS and Motor controlsDevice Marking and Package InformationDevice Package
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cs40n20 anh.pdf

Silicon N-Channel Power MOSFET R CS40N20 ANH General Description VDSS 200 V CS40N20 ANH the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario
cs40n20f a9h.pdf

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