CS40N20P Specs and Replacement

Type Designator: CS40N20P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 54 nS

Cossⓘ - Output Capacitance: 355 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TO-220

CS40N20P substitution

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CS40N20P datasheet

 ..1. Size:800K  convert
 cs40n20f cs40n20p.pdf pdf_icon

CS40N20P

nvert CS40N20F,CS40N20P Suzhou Convert Semiconductor Co ., Ltd. 200V N-Channel MOSFET FEATURES Proprietary New Planar Technology RDS(ON),typ.=50m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode APPLICATIONS DC-DC Converters DC-AC Inverters for UPS SMPS and Motor controls Device Marking and Package Information Device Package ... See More ⇒

 7.1. Size:216K  crhj
 cs40n20 a8.pdf pdf_icon

CS40N20P

Silicon N-Channel Power MOSFET R CS40N20 A8 General Description VDSS 200 V CS40N20 A8 the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

 7.2. Size:233K  crhj
 cs40n20 anh.pdf pdf_icon

CS40N20P

Silicon N-Channel Power MOSFET R CS40N20 ANH General Description VDSS 200 V CS40N20 ANH the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario... See More ⇒

 7.3. Size:222K  crhj
 cs40n20f a9h.pdf pdf_icon

CS40N20P

Silicon N-Channel Power MOSFET R CS40N20F A9H General Description VDSS 200 V CS40N20FA9H the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou... See More ⇒

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Detailed specifications: CS3N80BP, CS3N80BU, CS3N80BL, CS3N80BK, CS3N90F, CS3N90P, CS3N90B, CS40N20F, IRF740, CS4N100F, CS4N100V, CS4N100VF, CS4N150V, CS4N150W, CS4N150VF, CS4N60P, CS4N60U

Keywords - CS40N20P MOSFET specs

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