CS40N20P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CS40N20P
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 104 W
Предельно допустимое напряжение сток-исток |Uds|: 200 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 40 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 154 nC
Время нарастания (tr): 54 ns
Выходная емкость (Cd): 355 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.06 Ohm
Тип корпуса: TO-220
CS40N20P Datasheet (PDF)
cs40n20f cs40n20p.pdf
nvertCS40N20F,CS40N20PSuzhou Convert Semiconductor Co ., Ltd.200V N-Channel MOSFETFEATURES Proprietary New Planar Technology RDS(ON),typ.=50m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body DiodeAPPLICATIONS DC-DC Converters DC-AC Inverters for UPS SMPS and Motor controlsDevice Marking and Package InformationDevice Package
cs40n20 a8.pdf
Silicon N-Channel Power MOSFET R CS40N20 A8 General Description VDSS 200 V CS40N20 A8 the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
cs40n20 anh.pdf
Silicon N-Channel Power MOSFET R CS40N20 ANH General Description VDSS 200 V CS40N20 ANH the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario
cs40n20f a9h.pdf
Silicon N-Channel Power MOSFET R CS40N20F A9H General Description VDSS 200 V CS40N20FA9H the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou
cs40n20f a9e.pdf
Silicon N-Channel Power MOSFET R CS40N20F A9E General Description VDSS 200 V CS40N20F A9E the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.047 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vari
cs40n20a8.pdf
Silicon N-Channel Power MOSFET R CS40N20 A8 General Description VDSS 200 V CS40N20 A8 the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
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