CS5N70D Todos los transistores

 

CS5N70D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS5N70D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 94 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm
   Paquete / Cubierta: TO-252
 

 Búsqueda de reemplazo de CS5N70D MOSFET

   - Selección ⓘ de transistores por parámetros

 

CS5N70D Datasheet (PDF)

 ..1. Size:690K  convert
cs5n70f cs5n70p cs5n70u cs5n70d.pdf pdf_icon

CS5N70D

nvertSuzhou Convert Semiconductor Co ., Ltd.CS5N70F, CS5N70P, CS5N70U, CS5N70D700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS5N70F TO-2

 8.1. Size:829K  crhj
cs5n70f a9.pdf pdf_icon

CS5N70D

Silicon N-Channel Power MOSFET R CS5N70F A9 General Description VDSS 700 V CS5N70F A9,the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25) 32 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.2. Size:838K  crhj
cs5n70 a4.pdf pdf_icon

CS5N70D

Silicon N-Channel Power MOSFET R CS5N70 A4 General Description VDSS 700 V CS5N70 A4,the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 8.3. Size:829K  wuxi china
cs5n70fa9.pdf pdf_icon

CS5N70D

Silicon N-Channel Power MOSFET R CS5N70F A9 General Description VDSS 700 V CS5N70F A9,the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25) 32 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Otros transistores... CS5N120W , CS5N65F , CS5N65P , CS5N65U , CS5N65D , CS5N70F , CS5N70P , CS5N70U , SPP20N60C3 , CS5N80F , CS5N80P , CS5N80B , CS6N100F , CS6N100P , CS6N100W , CS6N120F , CS6N120P .

 

 
Back to Top

 


CS5N70D
  CS5N70D
  CS5N70D
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AP30N10D | AP30N06Y | AP30N06DF | AP30N06D | AP30N03DF | AP30N02D | AP30H04NF | AP30H04DF | AP30G03GD | AP300N04TLG5 | AP2P15MI | AP2N7002A | AP2N30MI | AP2N20MI | AP280N10MP | AP20G03GD

 

 

 
Back to Top

 

Popular searches

irlz24n | irf620 | irfp350 | 13003 transistor | c458 transistor | 2sc1775 | 2n1305 | 2sc5242

 


 
.