CS5N70D Specs and Replacement

Type Designator: CS5N70D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 94 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: TO-252

CS5N70D substitution

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CS5N70D datasheet

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 cs5n70f cs5n70p cs5n70u cs5n70d.pdf pdf_icon

CS5N70D

nvert Suzhou Convert Semiconductor Co ., Ltd. CS5N70F, CS5N70P, CS5N70U, CS5N70D 700V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS5N70F TO-2... See More ⇒

 8.1. Size:829K  crhj
 cs5n70f a9.pdf pdf_icon

CS5N70D

Silicon N-Channel Power MOSFET R CS5N70F A9 General Description VDSS 700 V CS5N70F A9,the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25 ) 32 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒

 8.2. Size:838K  crhj
 cs5n70 a4.pdf pdf_icon

CS5N70D

Silicon N-Channel Power MOSFET R CS5N70 A4 General Description VDSS 700 V CS5N70 A4,the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25 ) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw... See More ⇒

 8.3. Size:829K  wuxi china
 cs5n70fa9.pdf pdf_icon

CS5N70D

Silicon N-Channel Power MOSFET R CS5N70F A9 General Description VDSS 700 V CS5N70F A9,the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25 ) 32 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒

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Detailed specifications: CS5N120W, CS5N65F, CS5N65P, CS5N65U, CS5N65D, CS5N70F, CS5N70P, CS5N70U, SKD502T, CS5N80F, CS5N80P, CS5N80B, CS6N100F, CS6N100P, CS6N100W, CS6N120F, CS6N120P

Keywords - CS5N70D MOSFET specs

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