CS8N65F-B MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

CS8N65F-B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS8N65F-B

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 64 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 106 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.15 Ohm

Encapsulados: TO-220F-B

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CS8N65F-B datasheet

..1. Size:428K convert
cs8n65f cs8n65p cs8n65d cs8n65f-b.pdf pdf_icon

CS8N65F,CS8N65P, nvert Suzhou Convert Semiconductor Co ., Ltd. CS8N65D,CS8N65F-B 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS8N65F TO

..2. Size:443K convert
cs8n60f cs8n60p cs8n60u cs8n60d cs8n65f-b.pdf pdf_icon

CS8N60F,CS8N60P, nvert Suzhou Convert Semiconductor Co ., Ltd. CS8N60U,CS8N60D,CS8N65F-B 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS

7.1. Size:1248K jilin sino
jcs8n65v jcs8n65r jcs8n65c jcs8n65f jcs8n65s jcs8n65b.pdf pdf_icon

N R N-CHANNEL MOSFET JCS8N65C MAIN CHARACTERISTICS Package 8 8 8 8 8 8 8 8 8 ID .0 A VDSS 650 V Rdson-max 1.35 @Vgs=10V Qg-typ 32 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED

7.2. Size:354K crhj
cs8n65f a9h.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS8N65F A9H General Description VDSS 650 V CS8N65F A9H, the silicon N-channel Enhanced ID 8 A PD(TC=25 ) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

Otros transistores... CS7N70F, CS7N70U, CS7N80P, CS8N120V, CS8N120W, CS8N60P, CS8N60U, CS8N60D, AON7403, CS8N65F, CS8N65P, CS8N65D, CS8N70F, CS8N90F, CS8N90P, CS9N65F, CS9N65D

CS8N65F-B Todos los transistores