CS8N65F-B MOSFET Datasheet: N-Ch, 650V, 8A. Full specification with pinout and replacement list

CS8N65F-B Specs and Replacement

Type Designator: CS8N65F-B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 64 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 106 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.15 Ohm

Package: TO-220F-B

CS8N65F-B substitution

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CS8N65F-B datasheet

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CS8N60F,CS8N60P, nvert Suzhou Convert Semiconductor Co ., Ltd. CS8N60U,CS8N60D,CS8N65F-B 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS... See More ⇒

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Silicon N-Channel Power MOSFET R CS8N65F A9H General Description VDSS 650 V CS8N65F A9H, the silicon N-channel Enhanced ID 8 A PD(TC=25 ) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒