CS8N90P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS8N90P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 20 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 150 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.55 Ohm

Encapsulados: TO-220

 Búsqueda de reemplazo de CS8N90P MOSFET

- Selecciónⓘ de transistores por parámetros

 

CS8N90P datasheet

 ..1. Size:666K  convert
 cs8n90f cs8n90p.pdf pdf_icon

CS8N90P

nvert Suzhou Convert Semiconductor Co ., Ltd. CS8N90F, CS8N90P 900V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS8N90F TO-220F CS8N90F CS8N9

 8.1. Size:647K  crhj
 cs8n90 a8.pdf pdf_icon

CS8N90P

Silicon N-Channel Power MOSFET R CS8N90 A8 VDSS 900 V General Description ID 8 A CS8N90 A8, the silicon N-channel Enhanced PD (TC=25 ) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.2 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 8.2. Size:770K  crhj
 cs8n90f a9hd.pdf pdf_icon

CS8N90P

Silicon N-Channel Power MOSFET R CS8N90F A9HD VDSS 900 V General Description ID 8 A CS8N90F A9HD, the silicon N-channel Enhanced PD (TC=25 ) 57 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.3 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 8.3. Size:652K  crhj
 cs8n90f a9.pdf pdf_icon

CS8N90P

Silicon N-Channel Power MOSFET R CS8N90F A9 VDSS 900 V General Description ID 8 A CS8N90F A9, the silicon N-channel Enhanced PD (TC=25 ) 57 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.2 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

MOSTRAR MÁS

Otros transistores... CS8N60U, CS8N60D, CS8N65F-B, CS8N65F, CS8N65P, CS8N65D, CS8N70F, CS8N90F, AO4407A, CS9N65F, CS9N65D, CS9N80F, CS9N80P, CS9N90F, CS9N90P, CS9N90W, CS9N90V