CS8N90P Specs and Replacement

Type Designator: CS8N90P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.55 Ohm

Package: TO-220

CS8N90P substitution

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CS8N90P datasheet

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 cs8n90f cs8n90p.pdf pdf_icon

CS8N90P

nvert Suzhou Convert Semiconductor Co ., Ltd. CS8N90F, CS8N90P 900V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS8N90F TO-220F CS8N90F CS8N9... See More ⇒

 8.1. Size:647K  crhj
 cs8n90 a8.pdf pdf_icon

CS8N90P

Silicon N-Channel Power MOSFET R CS8N90 A8 VDSS 900 V General Description ID 8 A CS8N90 A8, the silicon N-channel Enhanced PD (TC=25 ) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.2 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw... See More ⇒

 8.2. Size:770K  crhj
 cs8n90f a9hd.pdf pdf_icon

CS8N90P

Silicon N-Channel Power MOSFET R CS8N90F A9HD VDSS 900 V General Description ID 8 A CS8N90F A9HD, the silicon N-channel Enhanced PD (TC=25 ) 57 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.3 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒

 8.3. Size:652K  crhj
 cs8n90f a9.pdf pdf_icon

CS8N90P

Silicon N-Channel Power MOSFET R CS8N90F A9 VDSS 900 V General Description ID 8 A CS8N90F A9, the silicon N-channel Enhanced PD (TC=25 ) 57 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.2 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe... See More ⇒

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Detailed specifications: CS8N60U, CS8N60D, CS8N65F-B, CS8N65F, CS8N65P, CS8N65D, CS8N70F, CS8N90F, AO4407A, CS9N65F, CS9N65D, CS9N80F, CS9N80P, CS9N90F, CS9N90P, CS9N90W, CS9N90V

Keywords - CS8N90P MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.