All MOSFET. CS8N90P Datasheet

 

CS8N90P Datasheet and Replacement


   Type Designator: CS8N90P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.55 Ohm
   Package: TO-220
 

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CS8N90P Datasheet (PDF)

 ..1. Size:666K  convert
 cs8n90f cs8n90p.pdf pdf_icon

CS8N90P

nvertSuzhou Convert Semiconductor Co ., Ltd.CS8N90F, CS8N90P900V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS8N90F TO-220F CS8N90FCS8N9

 8.1. Size:647K  crhj
 cs8n90 a8.pdf pdf_icon

CS8N90P

Silicon N-Channel Power MOSFET R CS8N90 A8 VDSS 900 V General Description ID 8 A CS8N90 A8, the silicon N-channel Enhanced PD (TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.2 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 8.2. Size:770K  crhj
 cs8n90f a9hd.pdf pdf_icon

CS8N90P

Silicon N-Channel Power MOSFET R CS8N90F A9HD VDSS 900 V General Description ID 8 A CS8N90F A9HD, the silicon N-channel Enhanced PD (TC=25) 57 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.3 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 8.3. Size:652K  crhj
 cs8n90f a9.pdf pdf_icon

CS8N90P

Silicon N-Channel Power MOSFET R CS8N90F A9 VDSS 900 V General Description ID 8 A CS8N90F A9, the silicon N-channel Enhanced PD (TC=25) 57 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.2 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

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Datasheet: CS8N60U , CS8N60D , CS8N65F-B , CS8N65F , CS8N65P , CS8N65D , CS8N70F , CS8N90F , AO4407A , CS9N65F , CS9N65D , CS9N80F , CS9N80P , CS9N90F , CS9N90P , CS9N90W , CS9N90V .

History: 24NM60G-T47S-T | IXZ210N50L | IXUC100N055 | STB55NF06L-1 | DH4N150F | IXTY90N055T2 | IXTH300N04T2

Keywords - CS8N90P MOSFET datasheet

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