CS8N90P Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: CS8N90P
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 20 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 35 ns
Cossⓘ - Выходная емкость: 150 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.55 Ohm
Тип корпуса: TO-220
Аналог (замена) для CS8N90P
CS8N90P Datasheet (PDF)
cs8n90f cs8n90p.pdf

nvertSuzhou Convert Semiconductor Co ., Ltd.CS8N90F, CS8N90P900V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS8N90F TO-220F CS8N90FCS8N9
cs8n90 a8.pdf

Silicon N-Channel Power MOSFET R CS8N90 A8 VDSS 900 V General Description ID 8 A CS8N90 A8, the silicon N-channel Enhanced PD (TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.2 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw
cs8n90f a9hd.pdf

Silicon N-Channel Power MOSFET R CS8N90F A9HD VDSS 900 V General Description ID 8 A CS8N90F A9HD, the silicon N-channel Enhanced PD (TC=25) 57 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.3 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
cs8n90f a9.pdf

Silicon N-Channel Power MOSFET R CS8N90F A9 VDSS 900 V General Description ID 8 A CS8N90F A9, the silicon N-channel Enhanced PD (TC=25) 57 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.2 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
Другие MOSFET... CS8N60U , CS8N60D , CS8N65F-B , CS8N65F , CS8N65P , CS8N65D , CS8N70F , CS8N90F , AO3407 , CS9N65F , CS9N65D , CS9N80F , CS9N80P , CS9N90F , CS9N90P , CS9N90W , CS9N90V .
History: AP4951GM-HF | MP15N60EIF | FQI3N25TU | TPCA8045-H | SSM4232GM | SIA907EDJT | 1N65G-T92-K
History: AP4951GM-HF | MP15N60EIF | FQI3N25TU | TPCA8045-H | SSM4232GM | SIA907EDJT | 1N65G-T92-K



Список транзисторов
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