CSP10N8P3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSP10N8P3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 108 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.5 nS
Cossⓘ - Capacitancia de salida: 605 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0083 Ohm
Paquete / Cubierta: TO-220
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CSP10N8P3 Datasheet (PDF)
csp10n8p3.pdf
CSP10N8P3100V N-Channel Split Gate MOSFETFEATURESl Super Low Gate Chargel 100% EAS Guaranteedl RoHS compliantl Green Device Availablel Excellent CdV/dt effect declinel Advanced high cell density Trench technologyAPPLICATIONSlDC/DC Converterl Ideal for high-frequency switching and synchronous rectificationDevice Marking and Package InformationDevice Package MarkingC
csp10n4p2.pdf
CSP10N4P2100V N-Channel Split Gate MOSFETFEATURESl Super Low Gate Chargel 100% EAS Guaranteedl RoHS compliantl Green Device Availablel Excellent CdV/dt effect declinel Advanced high cell density Trench technologyAPPLICATIONSlDC/DC Converterl Ideal for high-frequency switching and synchronous rectificationDevice Marking and Package InformationDevice Package MarkingC
Otros transistores... CSFR7N60U , CSN03N2P2 , CSN03N3P9 , CSN04N1P5 , CSN06N3P6 , CSNC04N8P5 , CSP08N6P5 , CSP10N4P2 , 5N65 , CST08N50U , CST08N50D , CST08N50F , CST1N50DLU , CST1N50DLD , CST1N50DLF , CST30N10F , CST30N10U .
History: NCE70T680F | NCE7190A | NCE7560K
History: NCE70T680F | NCE7190A | NCE7560K
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