All MOSFET. CSP10N8P3 Datasheet

 

CSP10N8P3 Datasheet and Replacement


   Type Designator: CSP10N8P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 108 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 6.5 nS
   Cossⓘ - Output Capacitance: 605 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm
   Package: TO-220
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CSP10N8P3 Datasheet (PDF)

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CSP10N8P3

CSP10N8P3100V N-Channel Split Gate MOSFETFEATURESl Super Low Gate Chargel 100% EAS Guaranteedl RoHS compliantl Green Device Availablel Excellent CdV/dt effect declinel Advanced high cell density Trench technologyAPPLICATIONSlDC/DC Converterl Ideal for high-frequency switching and synchronous rectificationDevice Marking and Package InformationDevice Package MarkingC

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CSP10N8P3

CSP10N4P2100V N-Channel Split Gate MOSFETFEATURESl Super Low Gate Chargel 100% EAS Guaranteedl RoHS compliantl Green Device Availablel Excellent CdV/dt effect declinel Advanced high cell density Trench technologyAPPLICATIONSlDC/DC Converterl Ideal for high-frequency switching and synchronous rectificationDevice Marking and Package InformationDevice Package MarkingC

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: STD95N4F3 | APT10021JFLL | SSW65R190S2 | NP180N04TUJ | SM4186T9RL | SRT10N160LD | NCE30P12BS

Keywords - CSP10N8P3 MOSFET datasheet

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