CSP10N8P3 Specs and Replacement
Type Designator: CSP10N8P3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 108 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.5 nS
Cossⓘ - Output Capacitance: 605 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm
Package: TO-220
CSP10N8P3 substitution
- MOSFET ⓘ Cross-Reference Search
CSP10N8P3 datasheet
csp10n8p3.pdf
CSP10N8P3 100V N-Channel Split Gate MOSFET FEATURES l Super Low Gate Charge l 100% EAS Guaranteed l RoHS compliant l Green Device Available l Excellent CdV/dt effect decline l Advanced high cell density Trench technology APPLICATIONS lDC/DC Converter l Ideal for high-frequency switching and synchronous rectification Device Marking and Package Information Device Package Marking C... See More ⇒
csp10n4p2.pdf
CSP10N4P2 100V N-Channel Split Gate MOSFET FEATURES l Super Low Gate Charge l 100% EAS Guaranteed l RoHS compliant l Green Device Available l Excellent CdV/dt effect decline l Advanced high cell density Trench technology APPLICATIONS lDC/DC Converter l Ideal for high-frequency switching and synchronous rectification Device Marking and Package Information Device Package Marking C... See More ⇒
Detailed specifications: CSFR7N60U, CSN03N2P2, CSN03N3P9, CSN04N1P5, CSN06N3P6, CSNC04N8P5, CSP08N6P5, CSP10N4P2, 5N65, CST08N50U, CST08N50D, CST08N50F, CST1N50DLU, CST1N50DLD, CST1N50DLF, CST30N10F, CST30N10U
Keywords - CSP10N8P3 MOSFET specs
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