All MOSFET. CSP10N8P3 Datasheet

 

CSP10N8P3 Datasheet and Replacement


   Type Designator: CSP10N8P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 108 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6.5 nS
   Cossⓘ - Output Capacitance: 605 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm
   Package: TO-220
 

 CSP10N8P3 substitution

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CSP10N8P3 Datasheet (PDF)

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CSP10N8P3

CSP10N8P3100V N-Channel Split Gate MOSFETFEATURESl Super Low Gate Chargel 100% EAS Guaranteedl RoHS compliantl Green Device Availablel Excellent CdV/dt effect declinel Advanced high cell density Trench technologyAPPLICATIONSlDC/DC Converterl Ideal for high-frequency switching and synchronous rectificationDevice Marking and Package InformationDevice Package MarkingC

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CSP10N8P3

CSP10N4P2100V N-Channel Split Gate MOSFETFEATURESl Super Low Gate Chargel 100% EAS Guaranteedl RoHS compliantl Green Device Availablel Excellent CdV/dt effect declinel Advanced high cell density Trench technologyAPPLICATIONSlDC/DC Converterl Ideal for high-frequency switching and synchronous rectificationDevice Marking and Package InformationDevice Package MarkingC

Datasheet: CSFR7N60U , CSN03N2P2 , CSN03N3P9 , CSN04N1P5 , CSN06N3P6 , CSNC04N8P5 , CSP08N6P5 , CSP10N4P2 , 4435 , CST08N50U , CST08N50D , CST08N50F , CST1N50DLU , CST1N50DLD , CST1N50DLF , CST30N10F , CST30N10U .

History: OSG80R1K4PF | 68P40 | SUP75N03-04 | SE6020DB | AP60WN1K5J | HMS11N65F | QM4002AD

Keywords - CSP10N8P3 MOSFET datasheet

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