CTN04N7P5 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CTN04N7P5

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 48 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.6 nS

Cossⓘ - Capacitancia de salida: 193 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm

Encapsulados: DFN5X6

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CTN04N7P5 datasheet

 ..1. Size:621K  1
 ctn04n7p5.pdf pdf_icon

CTN04N7P5

nvert CTN04N7P5 Suzhou Convert Semiconductor Co ., Ltd. 40V N-Channel Trench MOSFET FEATURES Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and high frequency circuits Device Marking and

 ..2. Size:621K  convert
 ctn04n7p5.pdf pdf_icon

CTN04N7P5

nvert CTN04N7P5 Suzhou Convert Semiconductor Co ., Ltd. 40V N-Channel Trench MOSFET FEATURES Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and high frequency circuits Device Marking and

 9.1. Size:455K  1
 ctn04pn035.pdf pdf_icon

CTN04N7P5

nvert CTN04PN035 Suzhou Convert Semiconductor Co ., Ltd. N+P-Channel Logic Level Enhancement Mode Power MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS H-bridge Inverters Device Marking and Package Information De

 9.2. Size:455K  convert
 ctn04pn035.pdf pdf_icon

CTN04N7P5

nvert CTN04PN035 Suzhou Convert Semiconductor Co ., Ltd. N+P-Channel Logic Level Enhancement Mode Power MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS H-bridge Inverters Device Marking and Package Information De

MOSTRAR MÁS

Otros transistores... CTD06N030, CTD06N070, CTD06N7P5, CTB06N7P5, CTP06N7P5, CTD10N033, CTD10N100, CTD10P650, IRLB3034, CTN04PN035, CTP03N2P7, CTP06N6P8, CTP10N066, CTP10P095, CTQ06N085, CTS03P015, CTS03PP055