CTN04N7P5 Todos los transistores

 

CTN04N7P5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CTN04N7P5
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 70 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2.6 nS
   Cossⓘ - Capacitancia de salida: 193 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
   Paquete / Cubierta: DFN5X6
 

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CTN04N7P5 Datasheet (PDF)

 ..1. Size:621K  1
 ctn04n7p5.pdf pdf_icon

CTN04N7P5

nvertCTN04N7P5Suzhou Convert Semiconductor Co ., Ltd.40V N-Channel Trench MOSFETFEATURES Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and high frequency circuitsDevice Marking and

 ..2. Size:621K  convert
 ctn04n7p5.pdf pdf_icon

CTN04N7P5

nvertCTN04N7P5Suzhou Convert Semiconductor Co ., Ltd.40V N-Channel Trench MOSFETFEATURES Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and high frequency circuitsDevice Marking and

 9.1. Size:455K  1
 ctn04pn035.pdf pdf_icon

CTN04N7P5

nvertCTN04PN035Suzhou Convert Semiconductor Co ., Ltd.N+P-Channel Logic Level Enhancement Mode Power MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS H-bridge InvertersDevice Marking and Package InformationDe

 9.2. Size:455K  convert
 ctn04pn035.pdf pdf_icon

CTN04N7P5

nvertCTN04PN035Suzhou Convert Semiconductor Co ., Ltd.N+P-Channel Logic Level Enhancement Mode Power MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS H-bridge InvertersDevice Marking and Package InformationDe

MOSTRAR MÁS

Otros transistores... CTD06N030 , CTD06N070 , CTD06N7P5 , CTB06N7P5 , CTP06N7P5 , CTD10N033 , CTD10N100 , CTD10P650 , 60N06 , CTN04PN035 , CTP03N2P7 , CTP06N6P8 , CTP10N066 , CTP10P095 , CTQ06N085 , CTS03P015 , CTS03PP055 .

History: QM3014M6 | BL7N60A-D | HTD1K5N10 | DN1509 | RJK03F8DNS

 

 
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