CTN04N7P5 Datasheet. Specs and Replacement

Type Designator: CTN04N7P5  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.6 nS

Cossⓘ - Output Capacitance: 193 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: DFN5X6

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CTN04N7P5 datasheet

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CTN04N7P5

nvert CTN04N7P5 Suzhou Convert Semiconductor Co ., Ltd. 40V N-Channel Trench MOSFET FEATURES Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and high frequency circuits Device Marking and ... See More ⇒

 ..2. Size:621K  convert
ctn04n7p5.pdf pdf_icon

CTN04N7P5

nvert CTN04N7P5 Suzhou Convert Semiconductor Co ., Ltd. 40V N-Channel Trench MOSFET FEATURES Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and high frequency circuits Device Marking and ... See More ⇒

 9.1. Size:455K  1
ctn04pn035.pdf pdf_icon

CTN04N7P5

nvert CTN04PN035 Suzhou Convert Semiconductor Co ., Ltd. N+P-Channel Logic Level Enhancement Mode Power MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS H-bridge Inverters Device Marking and Package Information De... See More ⇒

 9.2. Size:455K  convert
ctn04pn035.pdf pdf_icon

CTN04N7P5

nvert CTN04PN035 Suzhou Convert Semiconductor Co ., Ltd. N+P-Channel Logic Level Enhancement Mode Power MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS H-bridge Inverters Device Marking and Package Information De... See More ⇒

Detailed specifications: CTD06N030, CTD06N070, CTD06N7P5, CTB06N7P5, CTP06N7P5, CTD10N033, CTD10N100, CTD10P650, IRFB31N20D, CTN04PN035, CTP03N2P7, CTP06N6P8, CTP10N066, CTP10P095, CTQ06N085, CTS03P015, CTS03PP055

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