All MOSFET. CTN04N7P5 Datasheet

 

CTN04N7P5 Datasheet and Replacement


   Type Designator: CTN04N7P5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.6 nS
   Cossⓘ - Output Capacitance: 193 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: DFN5X6
 

 CTN04N7P5 substitution

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CTN04N7P5 Datasheet (PDF)

 ..1. Size:621K  1
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CTN04N7P5

nvertCTN04N7P5Suzhou Convert Semiconductor Co ., Ltd.40V N-Channel Trench MOSFETFEATURES Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and high frequency circuitsDevice Marking and

 ..2. Size:621K  convert
ctn04n7p5.pdf pdf_icon

CTN04N7P5

nvertCTN04N7P5Suzhou Convert Semiconductor Co ., Ltd.40V N-Channel Trench MOSFETFEATURES Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and high frequency circuitsDevice Marking and

 9.1. Size:455K  1
ctn04pn035.pdf pdf_icon

CTN04N7P5

nvertCTN04PN035Suzhou Convert Semiconductor Co ., Ltd.N+P-Channel Logic Level Enhancement Mode Power MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS H-bridge InvertersDevice Marking and Package InformationDe

 9.2. Size:455K  convert
ctn04pn035.pdf pdf_icon

CTN04N7P5

nvertCTN04PN035Suzhou Convert Semiconductor Co ., Ltd.N+P-Channel Logic Level Enhancement Mode Power MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS H-bridge InvertersDevice Marking and Package InformationDe

Datasheet: CTD06N030 , CTD06N070 , CTD06N7P5 , CTB06N7P5 , CTP06N7P5 , CTD10N033 , CTD10N100 , CTD10P650 , 60N06 , CTN04PN035 , CTP03N2P7 , CTP06N6P8 , CTP10N066 , CTP10P095 , CTQ06N085 , CTS03P015 , CTS03PP055 .

History: MTN1634V8 | UTT6NP10G-S08-R | APT84M50L | LSGG03R020 | SIA537EDJ | DMP610DL | QM2N7002E3K1

Keywords - CTN04N7P5 MOSFET datasheet

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