CTN04N7P5
MOSFET. Datasheet pdf. Equivalent
Type Designator: CTN04N7P5
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 48
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 70
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 18.8
nC
trⓘ - Rise Time: 2.6
nS
Cossⓘ -
Output Capacitance: 193
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075
Ohm
Package:
DFN5X6
CTN04N7P5
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CTN04N7P5
Datasheet (PDF)
..1. Size:621K 1
ctn04n7p5.pdf
nvertCTN04N7P5Suzhou Convert Semiconductor Co ., Ltd.40V N-Channel Trench MOSFETFEATURES Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and high frequency circuitsDevice Marking and
..2. Size:621K convert
ctn04n7p5.pdf
nvertCTN04N7P5Suzhou Convert Semiconductor Co ., Ltd.40V N-Channel Trench MOSFETFEATURES Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and high frequency circuitsDevice Marking and
9.1. Size:455K 1
ctn04pn035.pdf
nvertCTN04PN035Suzhou Convert Semiconductor Co ., Ltd.N+P-Channel Logic Level Enhancement Mode Power MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS H-bridge InvertersDevice Marking and Package InformationDe
9.2. Size:455K convert
ctn04pn035.pdf
nvertCTN04PN035Suzhou Convert Semiconductor Co ., Ltd.N+P-Channel Logic Level Enhancement Mode Power MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS H-bridge InvertersDevice Marking and Package InformationDe
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