CTN04N7P5 - описание и поиск аналогов

 

Аналоги CTN04N7P5. Основные параметры


   Наименование производителя: CTN04N7P5
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 48 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 70 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 2.6 ns
   Cossⓘ - Выходная емкость: 193 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm
   Тип корпуса: DFN5X6
 

 Аналог (замена) для CTN04N7P5

   - подбор ⓘ MOSFET транзистора по параметрам

 

CTN04N7P5 даташит

 ..1. Size:621K  1
 ctn04n7p5.pdf pdf_icon

CTN04N7P5

nvert CTN04N7P5 Suzhou Convert Semiconductor Co ., Ltd. 40V N-Channel Trench MOSFET FEATURES Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and high frequency circuits Device Marking and

 ..2. Size:621K  convert
 ctn04n7p5.pdf pdf_icon

CTN04N7P5

nvert CTN04N7P5 Suzhou Convert Semiconductor Co ., Ltd. 40V N-Channel Trench MOSFET FEATURES Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and high frequency circuits Device Marking and

 9.1. Size:455K  1
 ctn04pn035.pdf pdf_icon

CTN04N7P5

nvert CTN04PN035 Suzhou Convert Semiconductor Co ., Ltd. N+P-Channel Logic Level Enhancement Mode Power MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS H-bridge Inverters Device Marking and Package Information De

 9.2. Size:455K  convert
 ctn04pn035.pdf pdf_icon

CTN04N7P5

nvert CTN04PN035 Suzhou Convert Semiconductor Co ., Ltd. N+P-Channel Logic Level Enhancement Mode Power MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS H-bridge Inverters Device Marking and Package Information De

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... CTD06N030 , CTD06N070 , CTD06N7P5 , CTB06N7P5 , CTP06N7P5 , CTD10N033 , CTD10N100 , CTD10P650 , IRLB3034 , CTN04PN035 , CTP03N2P7 , CTP06N6P8 , CTP10N066 , CTP10P095 , CTQ06N085 , CTS03P015 , CTS03PP055 .

History: AUIRLL024Z

 

 
Back to Top

 


 
.