Справочник MOSFET. CTN04N7P5

 

CTN04N7P5 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: CTN04N7P5
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 48 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 70 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 2.6 ns
   Cossⓘ - Выходная емкость: 193 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm
   Тип корпуса: DFN5X6
 

 Аналог (замена) для CTN04N7P5

   - подбор ⓘ MOSFET транзистора по параметрам

 

CTN04N7P5 Datasheet (PDF)

 ..1. Size:621K  1
ctn04n7p5.pdfpdf_icon

CTN04N7P5

nvertCTN04N7P5Suzhou Convert Semiconductor Co ., Ltd.40V N-Channel Trench MOSFETFEATURES Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and high frequency circuitsDevice Marking and

 ..2. Size:621K  convert
ctn04n7p5.pdfpdf_icon

CTN04N7P5

nvertCTN04N7P5Suzhou Convert Semiconductor Co ., Ltd.40V N-Channel Trench MOSFETFEATURES Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and high frequency circuitsDevice Marking and

 9.1. Size:455K  1
ctn04pn035.pdfpdf_icon

CTN04N7P5

nvertCTN04PN035Suzhou Convert Semiconductor Co ., Ltd.N+P-Channel Logic Level Enhancement Mode Power MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS H-bridge InvertersDevice Marking and Package InformationDe

 9.2. Size:455K  convert
ctn04pn035.pdfpdf_icon

CTN04N7P5

nvertCTN04PN035Suzhou Convert Semiconductor Co ., Ltd.N+P-Channel Logic Level Enhancement Mode Power MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS H-bridge InvertersDevice Marking and Package InformationDe

Другие MOSFET... CTD06N030 , CTD06N070 , CTD06N7P5 , CTB06N7P5 , CTP06N7P5 , CTD10N033 , CTD10N100 , CTD10P650 , 60N06 , CTN04PN035 , CTP03N2P7 , CTP06N6P8 , CTP10N066 , CTP10P095 , CTQ06N085 , CTS03P015 , CTS03PP055 .

History: SUD40N08-16 | PSMN4R4-80PS | RQA0009SXAQS

 

 
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