CJAB20SN06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CJAB20SN06
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 20 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 395 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Paquete / Cubierta: DFNWB3X3-8L
- Selección de transistores por parámetros
CJAB20SN06 Datasheet (PDF)
cjab20sn06.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNDFNWB33-8L Plastic-Encapsulate MOSFETS CJAB20SN06 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPD F NWB33-8L8m@10V60V 20A9.7m@4.5VDESCRIPTION The CJAB20SN06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES
cjab20sn06.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNDFNWB33-8L Plastic-Encapsulate MOSFETS CJAB20SN06 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPD F NWB33-8L8m@10V60V 20A9.7m@4.5VDESCRIPTION The CJAB20SN06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES
cjab20n03.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB20N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYPPD F NWB3.33.3-8L8.5m@10V30 V20A12m@4.5VDESCRIPTION The CJAB20N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEA
cjab20n03.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB20N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYPPD F NWB3.33.3-8L8.5m@10V30 V20A12m@4.5VDESCRIPTION The CJAB20N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEA
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IPI80N08S2-07 | PSMN7R5-30YLD | IRFI840GPBF | CS3N100P | 2P998BC | IRFS453 | PTA13N65
History: IPI80N08S2-07 | PSMN7R5-30YLD | IRFI840GPBF | CS3N100P | 2P998BC | IRFS453 | PTA13N65
Liste
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