CJAB20SN06 MOSFET. Datasheet pdf. Equivalent

   Type Designator: CJAB20SN06
   Marking Code: AB20SN06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 395 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: DFNWB3X3-8L

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CJAB20SN06 Datasheet (PDF)

..1. Size:1226K 1
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNDFNWB33-8L Plastic-Encapsulate MOSFETS CJAB20SN06 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPD F NWB33-8L8m@10V60V 20A9.7m@4.5VDESCRIPTION The CJAB20SN06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES

..2. Size:1226K jiangsu
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8.1. Size:2126K 1
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB20N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYPPD F NWB3.33.3-8L8.5m@10V30 V20A12m@4.5VDESCRIPTION The CJAB20N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEA

8.2. Size:2126K jiangsu
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9.1. Size:2997K 1
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB25N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB3.33.3-8L 10m@10V30 V25A14m@4.5VDESCRIPTION The CJAB25N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications F

9.2. Size:1555K 1
cjab25p03.pdf pdf_icon

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB25P03 P-Channel Power MOSFET ID PDFNWB3.33.3-8L V(BR)DSS RDS(on)MAX -25A-30V20m@-10VDESCRIPTION The CJAB25P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES

9.3. Size:1326K 1
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB25SN06 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFNWB3.33.3-8L 13.5m@10V65V25A23.0m@4.5VDESCRIPTION The CJAB25SN06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB25N04 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB3.33.3-8L 9.5m@10V40V25A16m@4.5VDESCRIPTION The CJAB25N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEAT

9.5. Size:2997K jiangsu
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