CJAB25SN06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CJAB25SN06
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 20 W
Tensión drenaje-fuente |Vds|: 65 V
Tensión compuerta-fuente |Vgs|: 20 V
Corriente continua de drenaje |Id|: 25 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente |Vgs(th)|: 2.5 V
Carga de compuerta (Qg): 13.8 nC
Tiempo de elevación (tr): 12 nS
Conductancia de drenaje-sustrato (Cd): 239 pF
Resistencia drenaje-fuente RDS(on): 0.016 Ohm
Empaquetado / Estuche: PDFNWB3.3X3.3-8L
Búsqueda de reemplazo de MOSFET CJAB25SN06
CJAB25SN06 Datasheet (PDF)
0.1. cjab25sn06.pdf 
Size:1326K _jiangsu
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB25SN06 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFNWB3.33.3-8L 13.5m@10V65V25A23.0m@4.5VDESCRIPTION The CJAB25SN06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
8.1. cjab25n04.pdf Size:1122K _jiangsu
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB25N04 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB3.33.3-8L 9.5m@10V40V25A16m@4.5VDESCRIPTION The CJAB25N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEAT
8.2. cjab25n03.pdf Size:2997K _jiangsu
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB25N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB3.33.3-8L 10m@10V30 V25A14m@4.5VDESCRIPTION The CJAB25N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications F
8.3. cjab25p03.pdf Size:1555K _jiangsu
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB25P03 P-Channel Power MOSFET ID PDFNWB3.33.3-8L V(BR)DSS RDS(on)MAX -25A-30V20m@-10VDESCRIPTION The CJAB25P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES
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