CJAB25SN06 Datasheet. Specs and Replacement

Type Designator: CJAB25SN06  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 239 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: PDFNWB3.3X3.3-8L

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CJAB25SN06 substitution

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CJAB25SN06 datasheet

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CJAB25SN06

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3 3.3-8L Plastic-Encapsulate MOSFETS CJAB25SN06 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFNWB3.3 3.3-8L 13.5m @10V 65V 25A 23.0m @4.5V DESCRIPTION The CJAB25SN06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications ... See More ⇒

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CJAB25SN06

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3 3.3-8L Plastic-Encapsulate MOSFETS CJAB25SN06 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFNWB3.3 3.3-8L 13.5m @10V 65V 25A 23.0m @4.5V DESCRIPTION The CJAB25SN06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications ... See More ⇒

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CJAB25SN06

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.3 3.3-8L Plastic-Encapsulate MOSFETS CJAB25N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB3.3 3.3-8L 10m @10V 30 V 25A 14m @4.5V DESCRIPTION The CJAB25N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications F... See More ⇒

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CJAB25SN06

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Detailed specifications: CJA03N10S, CJAA3134K, CJAA3139K, CJAB20N03, CJAB20SN06, CJAB25N03, CJAB25N04, CJAB25P03, AON6414A, CJAB35P03, CJAB40N03, CJAB40SN10, CJAB55N03, CJAB60N03, CJAC0410, CJAC100P03, CJAC100SN08

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