All MOSFET. CJAB25SN06 Datasheet

 

CJAB25SN06 MOSFET. Datasheet pdf. Equivalent

Type Designator: CJAB25SN06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 20 W

Maximum Drain-Source Voltage |Vds|: 65 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 25 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 13.8 nC

Rise Time (tr): 12 nS

Drain-Source Capacitance (Cd): 239 pF

Maximum Drain-Source On-State Resistance (Rds): 0.016 Ohm

Package: PDFNWB3.3X3.3-8L

CJAB25SN06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CJAB25SN06 Datasheet (PDF)

0.1. cjab25sn06.pdf Size:1326K _jiangsu

CJAB25SN06
CJAB25SN06

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB25SN06 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFNWB3.33.3-8L 13.5m@10V65V25A23.0m@4.5VDESCRIPTION The CJAB25SN06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications

8.1. cjab25n04.pdf Size:1122K _jiangsu

CJAB25SN06
CJAB25SN06

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB25N04 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB3.33.3-8L 9.5m@10V40V25A16m@4.5VDESCRIPTION The CJAB25N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEAT

8.2. cjab25n03.pdf Size:2997K _jiangsu

CJAB25SN06
CJAB25SN06

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB25N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB3.33.3-8L 10m@10V30 V25A14m@4.5VDESCRIPTION The CJAB25N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications F

 8.3. cjab25p03.pdf Size:1555K _jiangsu

CJAB25SN06
CJAB25SN06

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB25P03 P-Channel Power MOSFET ID PDFNWB3.33.3-8L V(BR)DSS RDS(on)MAX -25A-30V20m@-10VDESCRIPTION The CJAB25P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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