DMN3009SK3 Todos los transistores

 

DMN3009SK3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMN3009SK3
   Código: N3009S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 44 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 80 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 42 nC
   Tiempo de subida (tr): 4.1 nS
   Conductancia de drenaje-sustrato (Cd): 315 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0055 Ohm
   Paquete / Cubierta: TO252

 Búsqueda de reemplazo de MOSFET DMN3009SK3

 

DMN3009SK3 Datasheet (PDF)

 ..1. Size:591K  diodes
dmn3009sk3.pdf

DMN3009SK3 DMN3009SK3

DMN3009SK3 Green 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max BVDSS RDS(ON) max Low Input Capacitance TC = +25C Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 5.5m @ VGS = 10V 80A 30V Halogen and Antimony Free. Green Device (Note 3) 9.0m @ VGS = 4.5V 60A Qualified to AEC-Q101 Standards for H

 ..2. Size:265K  inchange semiconductor
dmn3009sk3.pdf

DMN3009SK3 DMN3009SK3

isc N-Channel MOSFET Transistor DMN3009SK3FEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 5.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 7.1. Size:544K  1
dmn3009lfvw-7.pdf

DMN3009SK3 DMN3009SK3

DMN3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max BVDSS RDS(ON) max Small form factor thermally efficient package enables higher TC = +25C density end products 5.0m @ VGS = 10V 60A Occupies just 33% of the board area occupied b

 7.2. Size:544K  diodes
dmn3009lfvw.pdf

DMN3009SK3 DMN3009SK3

DMN3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max BVDSS RDS(ON) max Small form factor thermally efficient package enables higher TC = +25C density end products 5.0m @ VGS = 10V 60A Occupies just 33% of the board area occupied b

 8.1. Size:210K  diodes
dmn3005lk3.pdf

DMN3009SK3 DMN3009SK3

DMN3005LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: TO252-3L Case Material: Molded Plastic, Green Molding Compound. Low Input Capacitance UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminals Connections: See

 8.2. Size:505K  diodes
dmn3008sfg.pdf

DMN3009SK3 DMN3009SK3

DMN3008SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) Ensures on-state losses are minimized ID max V(BR)DSS RDS(ON) max TC = +25C Small, form factor thermally efficient package enables higher density end products 4.4m @ VGS = 10V 62A 30V Occupies only 33% of the board area occupied by SO-8 enabling

 8.3. Size:151K  diodes
dmn3007lss.pdf

DMN3009SK3 DMN3009SK3

DMN3007LSSSINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SO-8 7m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 10m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020 Low Gate Threshold Voltage Terminals Connections: See Di

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