DMN3009SK3 MOSFET. Datasheet pdf. Equivalent
Type Designator: DMN3009SK3
Marking Code: N3009S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 42 nC
trⓘ - Rise Time: 4.1 nS
Cossⓘ - Output Capacitance: 315 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO252
DMN3009SK3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMN3009SK3 Datasheet (PDF)
dmn3009sk3.pdf
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DMN3009SK3 Green 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max BVDSS RDS(ON) max Low Input Capacitance TC = +25C Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 5.5m @ VGS = 10V 80A 30V Halogen and Antimony Free. Green Device (Note 3) 9.0m @ VGS = 4.5V 60A Qualified to AEC-Q101 Standards for H
dmn3009sk3.pdf
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isc N-Channel MOSFET Transistor DMN3009SK3FEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 5.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
dmn3009lfvw-7.pdf
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DMN3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max BVDSS RDS(ON) max Small form factor thermally efficient package enables higher TC = +25C density end products 5.0m @ VGS = 10V 60A Occupies just 33% of the board area occupied b
dmn3009lfvw.pdf
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DMN3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max BVDSS RDS(ON) max Small form factor thermally efficient package enables higher TC = +25C density end products 5.0m @ VGS = 10V 60A Occupies just 33% of the board area occupied b
dmn3005lk3.pdf
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DMN3005LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: TO252-3L Case Material: Molded Plastic, Green Molding Compound. Low Input Capacitance UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminals Connections: See
dmn3008sfg.pdf
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DMN3008SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) Ensures on-state losses are minimized ID max V(BR)DSS RDS(ON) max TC = +25C Small, form factor thermally efficient package enables higher density end products 4.4m @ VGS = 10V 62A 30V Occupies only 33% of the board area occupied by SO-8 enabling
dmn3007lss.pdf
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DMN3007LSSSINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SO-8 7m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 10m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020 Low Gate Threshold Voltage Terminals Connections: See Di
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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