DMN53D0LQ Todos los transistores

 

DMN53D0LQ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMN53D0LQ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.54 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2.5 nS
   Cossⓘ - Capacitancia de salida: 5.3 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
   Paquete / Cubierta: SOT23
 

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DMN53D0LQ Datasheet (PDF)

 ..1. Size:430K  diodes
 dmn53d0lq.pdf pdf_icon

DMN53D0LQ

DMN53D0LQ N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits ID Low On-Resistance V(BR)DSS RDS(ON) TA = +25C Very Low Gate Threshold Voltage Low Input Capacitance 1.6 @ VGS = 10V 500 mA 50V Fast Switching Speed 2.5 @ VGS = 4.5V 200 mA Low Input/Output Leakage ESD Protected to 2KV Totally Lead-Fre

 6.1. Size:237K  diodes
 dmn53d0lw.pdf pdf_icon

DMN53D0LQ

DMN53D0LWN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID N-Channel MOSFETV(BR)DSS RDS(ON) TA = +25C Low On-Resistance Low Input Capacitance 2.0 @ VGS = 10V 360mA 50V Fast Switching Speed 3.0 @ VGS = 5V 250mA ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free.

 6.2. Size:248K  diodes
 dmn53d0lt.pdf pdf_icon

DMN53D0LQ

DMN53D0LTN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits N-Channel MOSFETID V(BR)DSS RDS(ON) TA = +25C Low On-Resistance Very Low Gate Threshold Voltage 1.6 @ VGS = 10V 350 mA 50V Low Input Capacitance 2.5 @ VGS = 4.5V 200 mA Fast Switching Speed Low Input/ Output Leakage Ultra-Small Surface

 6.3. Size:328K  diodes
 dmn53d0l.pdf pdf_icon

DMN53D0LQ

DMN53D0LN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits ID N-Channel MOSFETV(BR)DSS RDS(ON) TA = +25C Low On-Resistance Very Low Gate Threshold Voltage 1.6 @ VGS = 10V 500 mA 50V Low Input Capacitance 2.5 @ VGS = 4.5V 200 mA Fast Switching Speed Low Input/Output Leakage ESD Protected to 2KV

MOSTRAR MÁS

Otros transistores... DMN3018SSS , DMN3023L , DMN3032LFDB , DMN3110LCP3 , DMN4031SSDQ , DMN4035L , DMN4060SVT , DMN4800LSSQ , 75N75 , DMN6040SSDQ , DMN6040SVTQ , DMN6070SY , DMN61D8L , DMN61D8LQ , DMN61D8LVT , DMN61D9UW , DMN62D0U .

History: IRF6613 | 2SK1113 | DMN4060SVT

 

 
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