All MOSFET. DMN53D0LQ Datasheet

 

DMN53D0LQ MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMN53D0LQ
   Marking Code: 53E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 0.54 W
   Maximum Drain-Source Voltage |Vds|: 50 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V
   Maximum Drain Current |Id|: 0.5 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 0.6 nC
   Rise Time (tr): 2.5 nS
   Drain-Source Capacitance (Cd): 5.3 pF
   Maximum Drain-Source On-State Resistance (Rds): 1.6 Ohm
   Package: SOT23

 DMN53D0LQ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMN53D0LQ Datasheet (PDF)

 ..1. Size:430K  diodes
 dmn53d0lq.pdf

DMN53D0LQ DMN53D0LQ

DMN53D0LQ N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits ID Low On-Resistance V(BR)DSS RDS(ON) TA = +25C Very Low Gate Threshold Voltage Low Input Capacitance 1.6 @ VGS = 10V 500 mA 50V Fast Switching Speed 2.5 @ VGS = 4.5V 200 mA Low Input/Output Leakage ESD Protected to 2KV Totally Lead-Fre

 6.1. Size:237K  diodes
 dmn53d0lw.pdf

DMN53D0LQ DMN53D0LQ

DMN53D0LWN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID N-Channel MOSFETV(BR)DSS RDS(ON) TA = +25C Low On-Resistance Low Input Capacitance 2.0 @ VGS = 10V 360mA 50V Fast Switching Speed 3.0 @ VGS = 5V 250mA ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free.

 6.2. Size:248K  diodes
 dmn53d0lt.pdf

DMN53D0LQ DMN53D0LQ

DMN53D0LTN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits N-Channel MOSFETID V(BR)DSS RDS(ON) TA = +25C Low On-Resistance Very Low Gate Threshold Voltage 1.6 @ VGS = 10V 350 mA 50V Low Input Capacitance 2.5 @ VGS = 4.5V 200 mA Fast Switching Speed Low Input/ Output Leakage Ultra-Small Surface

 6.3. Size:328K  diodes
 dmn53d0l.pdf

DMN53D0LQ DMN53D0LQ

DMN53D0LN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits ID N-Channel MOSFETV(BR)DSS RDS(ON) TA = +25C Low On-Resistance Very Low Gate Threshold Voltage 1.6 @ VGS = 10V 500 mA 50V Low Input Capacitance 2.5 @ VGS = 4.5V 200 mA Fast Switching Speed Low Input/Output Leakage ESD Protected to 2KV

 6.4. Size:256K  diodes
 dmn53d0lv.pdf

DMN53D0LQ DMN53D0LQ

DMN53D0LVDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits Dual N-Channel MOSFETID V(BR)DSS RDS(ON) Low On-ResistanceTA = +25C Very Low Gate Threshold Voltage 1.6 @ VGS = 10V 350 mA 50V Low Input Capacitance 2.5 @ VGS = 4.5V 200 mA Fast Switching Speed Low Input/ Output Leakage Ultra-Sm

 6.5. Size:258K  diodes
 dmn53d0ldw.pdf

DMN53D0LQ DMN53D0LQ

DMN53D0LDWDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Dual N-Channel MOSFETID V(BR)DSS RDS(ON) TA = +25C Low On-Resistance Low Input Capacitance 1.6 @ VGS = 10V 360mA 50V Fast Switching Speed 2.5 @ VGS = 4.5V 250mA Small Surface Mount Package ESD protected to 2KV Description Totally Lead-Free &

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , MMF60R360QTH , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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