DMN53D0LQ MOSFET Datasheet: N-Ch, 50V, 0.5A. Full specification with pinout and replacement list

DMN53D0LQ Specs and Replacement

   Type Designator: DMN53D0LQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 0.54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 2.5 nS
   Cossⓘ - Output Capacitance: 5.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: SOT23

DMN53D0LQ substitution

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DMN53D0LQ datasheet

..1. Size:430K diodes
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DMN53D0LQ N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits ID Low On-Resistance V(BR)DSS RDS(ON) TA = +25 C Very Low Gate Threshold Voltage Low Input Capacitance 1.6 @ VGS = 10V 500 mA 50V Fast Switching Speed 2.5 @ VGS = 4.5V 200 mA Low Input/Output Leakage ESD Protected to 2KV Totally Lead-Fre... See More ⇒

6.1. Size:237K diodes
dmn53d0lw.pdf pdf_icon

DMN53D0LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID N-Channel MOSFET V(BR)DSS RDS(ON) TA = +25 C Low On-Resistance Low Input Capacitance 2.0 @ VGS = 10V 360mA 50V Fast Switching Speed 3.0 @ VGS = 5V 250mA ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. ... See More ⇒

6.2. Size:248K diodes
dmn53d0lt.pdf pdf_icon

DMN53D0LT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits N-Channel MOSFET ID V(BR)DSS RDS(ON) TA = +25 C Low On-Resistance Very Low Gate Threshold Voltage 1.6 @ VGS = 10V 350 mA 50V Low Input Capacitance 2.5 @ VGS = 4.5V 200 mA Fast Switching Speed Low Input/ Output Leakage Ultra-Small Surface ... See More ⇒

6.3. Size:328K diodes
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