DMN53D0LQ - описание и поиск аналогов

DMN53D0LQ N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits ID Low On-Resistance V(BR)DSS RDS(ON) TA = +25 C Very Low Gate Threshold Voltage Low Input Capacitance 1.6 @ VGS = 10V 500 mA 50V Fast Switching Speed 2.5 @ VGS = 4.5V 200 mA Low Input/Output Leakage ESD Protected to 2KV Totally Lead-Fre

DMN53D0LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID N-Channel MOSFET V(BR)DSS RDS(ON) TA = +25 C Low On-Resistance Low Input Capacitance 2.0 @ VGS = 10V 360mA 50V Fast Switching Speed 3.0 @ VGS = 5V 250mA ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free.

DMN53D0LT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits N-Channel MOSFET ID V(BR)DSS RDS(ON) TA = +25 C Low On-Resistance Very Low Gate Threshold Voltage 1.6 @ VGS = 10V 350 mA 50V Low Input Capacitance 2.5 @ VGS = 4.5V 200 mA Fast Switching Speed Low Input/ Output Leakage Ultra-Small Surface

DMN53D0LV DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits Dual N-Channel MOSFET ID V(BR)DSS RDS(ON) Low On-Resistance TA = +25 C Very Low Gate Threshold Voltage 1.6 @ VGS = 10V 350 mA 50V Low Input Capacitance 2.5 @ VGS = 4.5V 200 mA Fast Switching Speed Low Input/ Output Leakage Ultra-Sm

DMN53D0LDW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Dual N-Channel MOSFET ID V(BR)DSS RDS(ON) TA = +25 C Low On-Resistance Low Input Capacitance 1.6 @ VGS = 10V 360mA 50V Fast Switching Speed 2.5 @ VGS = 4.5V 250mA Small Surface Mount Package ESD protected to 2KV Description Totally Lead-Free &