DMN6070SY Todos los transistores

 

DMN6070SY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMN6070SY
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4.1 nS
   Cossⓘ - Capacitancia de salida: 26.5 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
   Paquete / Cubierta: SOT89
 

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DMN6070SY Datasheet (PDF)

 ..1. Size:495K  diodes
 dmn6070sy.pdf pdf_icon

DMN6070SY

DMN6070SY N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Gate Threshold Voltage BVDSS RDS(ON) TA = +25 Low Input Capacitance C Fast Switching Speed 85m @ VGS = 10V 4.1A 60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 110m @ VGS = 4.5V 3.6A Halogen and Antimony Free. Green Device (Note 3) Description Me

 6.1. Size:230K  diodes
 dmn6070ssd.pdf pdf_icon

DMN6070SY

DMN6070SSD60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance Fast Switching Speed 80m @ VGS = 10V 4.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 60V 100m @ VGS = 4.5V 3.6A Halogen and Antimony Free. Green Device (Note 3

 6.2. Size:278K  diodes
 dmn6070sfcl.pdf pdf_icon

DMN6070SY

DMN6070SFCL60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Typical off board profile of 0.5mm - ideally suited for thin ID max V(BR)DSS RDS(ON) max TA = +25C applications Low RDS(ON) minimizes conduction losses 85 m @ VGS = 10V 3.0A 60V PCB footprint of 2.56mm2 120 m @ VGS = 4V 2.5A Totally Lead-Free & Fully RoHS C

 6.3. Size:1549K  cn vbsemi
 dmn6070ssd.pdf pdf_icon

DMN6070SY

DMN6070SSDwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Chann

MOSTRAR MÁS

Otros transistores... DMN3110LCP3 , DMN4031SSDQ , DMN4035L , DMN4060SVT , DMN4800LSSQ , DMN53D0LQ , DMN6040SSDQ , DMN6040SVTQ , IRFB31N20D , DMN61D8L , DMN61D8LQ , DMN61D8LVT , DMN61D9UW , DMN62D0U , DMN63D8L , DMN63D8LW , DMN65D8LQ .

History: APT10M11JVFR

 

 
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