DMN6070SY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMN6070SY
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 4.1 nS
   Cossⓘ - Capacitancia de salida: 26.5 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
   Paquete / Cubierta: SOT89

Búsqueda de reemplazo de MOSFET DMN6070SY

DMN6070SY Datasheet (PDF)

..1. Size:495K diodes
dmn6070sy.pdf

DMN6070SY N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Gate Threshold Voltage BVDSS RDS(ON) TA = +25 Low Input Capacitance C Fast Switching Speed 85m @ VGS = 10V 4.1A 60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 110m @ VGS = 4.5V 3.6A Halogen and Antimony Free. Green Device (Note 3) Description Me

6.1. Size:230K diodes
dmn6070ssd.pdf

DMN6070SSD60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance Fast Switching Speed 80m @ VGS = 10V 4.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 60V 100m @ VGS = 4.5V 3.6A Halogen and Antimony Free. Green Device (Note 3

6.2. Size:278K diodes
dmn6070sfcl.pdf

DMN6070SFCL60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Typical off board profile of 0.5mm - ideally suited for thin ID max V(BR)DSS RDS(ON) max TA = +25C applications Low RDS(ON) minimizes conduction losses 85 m @ VGS = 10V 3.0A 60V PCB footprint of 2.56mm2 120 m @ VGS = 4V 2.5A Totally Lead-Free & Fully RoHS C

6.3. Size:1549K cn vbsemi
dmn6070ssd.pdf

DMN6070SSDwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Chann

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Liste

Recientemente añadidas las descripciónes de los transistores: