DMN6070SY MOSFET Datasheet: N-Ch, 60V, 4.1A. Full specification with pinout and replacement list

DMN6070SY Specs and Replacement

   Type Designator: DMN6070SY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 4.1 nS
   Cossⓘ - Output Capacitance: 26.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOT89

DMN6070SY substitution

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DMN6070SY datasheet

..1. Size:495K diodes
dmn6070sy.pdf pdf_icon

DMN6070SY N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Gate Threshold Voltage BVDSS RDS(ON) TA = +25 Low Input Capacitance C Fast Switching Speed 85m @ VGS = 10V 4.1A 60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 110m @ VGS = 4.5V 3.6A Halogen and Antimony Free. Green Device (Note 3) Description Me... See More ⇒

6.1. Size:230K diodes
dmn6070ssd.pdf pdf_icon

DMN6070SSD 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max TA = +25 C Low Input Capacitance Fast Switching Speed 80m @ VGS = 10V 4.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 60V 100m @ VGS = 4.5V 3.6A Halogen and Antimony Free. Green Device (Note 3... See More ⇒

6.2. Size:278K diodes
dmn6070sfcl.pdf pdf_icon

DMN6070SFCL 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Typical off board profile of 0.5mm - ideally suited for thin ID max V(BR)DSS RDS(ON) max TA = +25 C applications Low RDS(ON) minimizes conduction losses 85 m @ VGS = 10V 3.0A 60V PCB footprint of 2.56mm2 120 m @ VGS = 4V 2.5A Totally Lead-Free & Fully RoHS C... See More ⇒

6.3. Size:1549K cn vbsemi
dmn6070ssd.pdf pdf_icon

DMN6070SSD www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Chann... See More ⇒

Detailed specifications: DMN3110LCP3 , DMN4031SSDQ , DMN4035L , DMN4060SVT , DMN4800LSSQ , DMN53D0LQ , DMN6040SSDQ , DMN6040SVTQ , IRF2807 , DMN61D8L , DMN61D8LQ , DMN61D8LVT , DMN61D9UW , DMN62D0U , DMN63D8L , DMN63D8LW , DMN65D8LQ .