DMN63D8LW Todos los transistores

 

DMN63D8LW MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMN63D8LW
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.38 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.9 nS
   Cossⓘ - Capacitancia de salida: 3 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm
   Paquete / Cubierta: SOT323
     - Selección de transistores por parámetros

 

DMN63D8LW Datasheet (PDF)

 ..1. Size:455K  diodes
 dmn63d8lw.pdf pdf_icon

DMN63D8LW

DMN63D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance 2.8 @ VGS = 10V 380mA 30V Fast Switching Speed 330mA 3.8 @ VGS = 5V Low Input/Output Leakage ESD Protected Up To 1kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) D

 6.1. Size:535K  diodes
 dmn63d8l.pdf pdf_icon

DMN63D8LW

DMN63D8L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance 2.8 @ VGS = 10V 350mA 30V Fast Switching Speed 300mA 3.8 @ VGS = 5V Low Input/Output Leakage ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Descrip

 6.2. Size:167K  diodes
 dmn63d8lv.pdf pdf_icon

DMN63D8LW

DMN63D8LVDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Dual N-Channel MOSFET Low On-ResistanceID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25C Fast Switching Speed 4.2 @ VGS = 5V 200mA 30V Small Surface Mount Package 2.8 @ VGS = 10V 260mA ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 6.3. Size:166K  diodes
 dmn63d8ldw.pdf pdf_icon

DMN63D8LW

DMN63D8LDWDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Dual N-Channel MOSFET Low On-ResistanceID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25C Fast Switching Speed 4.2 @ VGS = 4.5V 200mA 30V Small Surface Mount Package 2.8 @ VGS = 10V 260mA ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 &

MOSTRAR MÁS

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: VS3620DP-G | 2SJ152

 

 
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