All MOSFET. DMN63D8LW Datasheet

 

DMN63D8LW MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMN63D8LW
   Marking Code: MXX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 0.38 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.9 nC
   trⓘ - Rise Time: 3.9 nS
   Cossⓘ - Output Capacitance: 3 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: SOT323

 DMN63D8LW Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMN63D8LW Datasheet (PDF)

 ..1. Size:455K  diodes
dmn63d8lw.pdf

DMN63D8LW
DMN63D8LW

DMN63D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance 2.8 @ VGS = 10V 380mA 30V Fast Switching Speed 330mA 3.8 @ VGS = 5V Low Input/Output Leakage ESD Protected Up To 1kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) D

 6.1. Size:535K  diodes
dmn63d8l.pdf

DMN63D8LW
DMN63D8LW

DMN63D8L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance 2.8 @ VGS = 10V 350mA 30V Fast Switching Speed 300mA 3.8 @ VGS = 5V Low Input/Output Leakage ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Descrip

 6.2. Size:167K  diodes
dmn63d8lv.pdf

DMN63D8LW
DMN63D8LW

DMN63D8LVDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Dual N-Channel MOSFET Low On-ResistanceID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25C Fast Switching Speed 4.2 @ VGS = 5V 200mA 30V Small Surface Mount Package 2.8 @ VGS = 10V 260mA ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 6.3. Size:166K  diodes
dmn63d8ldw.pdf

DMN63D8LW
DMN63D8LW

DMN63D8LDWDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Dual N-Channel MOSFET Low On-ResistanceID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25C Fast Switching Speed 4.2 @ VGS = 4.5V 200mA 30V Small Surface Mount Package 2.8 @ VGS = 10V 260mA ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 &

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SJ264

 

 
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