80N06-251 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

80N06-251 datasheet

..1. Size:2169K goford
80n06-251.pdf pdf_icon

80N06-251 GOFORD Description The 80N06-251 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS R DS(ON) ID @ 10V (typ) 80 A 60V 11.7 m Schematic diagram High density cell design for ultra low Rdson Fully characterized avalanche voltage and cur

8.1. Size:61K st
stw80n06-10.pdf pdf_icon

STW80N06-10 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE VDSS RDS(on) ID STW80N06-10 60 V

8.2. Size:77K st
stp80n06-10.pdf pdf_icon

STP80N06-10 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STP80N06-10 60 V

8.3. Size:301K analog power
am80n06-05d.pdf pdf_icon

Analog Power AM80N06-05D N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 5.9 @ VGS = 10V 76 Low thermal impedance 60 6.6 @ VGS = 5.5V 72 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

Otros transistores... BRFL8N60 , IRFB3710 , 2312 , 06N06L , 18N10W , 2300F , 3400H , 3415A , 5N65 , 8680A , G01N20R , G06N10 , G08N03D2 , G08N06S , G1006LE , G1007 , G10N10A .